HMC998APM5ETR-R5 Allicdata Electronics
Allicdata Part #:

HMC998APM5ETR-R5-ND

Manufacturer Part#:

HMC998APM5ETR-R5

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: DISTRIBUTED AMPLIFIER
More Detail: RF Amplifier IC
DataSheet: HMC998APM5ETR-R5 datasheetHMC998APM5ETR-R5 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Active
Description

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The HMC998APM5ETR-R5 is an RF amplifier used for a wide range of wireless applications. It is an integrated amplifier in a lead-free, RoHS-compliant, surface-mountable package with a low thermal resistance package. The HMC998APM5ETR-RF is an ideal choice for applications requiring a high linearity and linear/logarithmic gain control capability to maximise dynamic range and reduce distortion.

The HMC998APM5ETR-R5 is suitable for applications including high linearity and high performance WLAN receivers and amplifiers, high linearity linear/logarithmic amplifier drivers, and power-amplifier drivers. The amplifier has an integrated, temperature-stable bias circuit able to compensate for temperature variations over a header operating range. The HMC998APM5ETR-R5 provides excellent gain flatness over temperature. It is available in a very wide temperature range, up to 150°C, with the smallest package sizes.

The HMC998APM5ETR-R5 has integrated ESD protection circuits for both RF input and RF output ports, providing robust performance in ESD-sensitive applications. The amplifier also features a range of original features designed for RF amplifier applications, such as a wide common-mode impedance range and an output power detector. The device also incorporates a gain control function, allowing gain to be adjusted over a wide dynamic range.

The working principle of the HMC998APM5ETR-R5 is based on a combination of an integrated RF amplifier and an external bias circuit. The RF amplifier is a two-stage class A design, which utilizes an active, differential input stage and a broadband, high-linearity, power output stage. The bias circuit is designed to provide a stable, temperature-compensated bias current to the active devices in the RF amplifier. By controlling the bias current, the gain of the amplifier can be controlled over a wide dynamic range with minimal distortion.

The HMC998APM5ETR-R5 provides reliable performance and low distortion for applications requiring high linearity, low noise, and expanded dynamic range. With its robust ESD protection and wide temperature range, the HMC998APM5ETR-R5 is an ideal choice for high-performance, wide-band RF applications. It is available in a variety of packages for different applications. The device can be used in a variety of applications, such as wireless communication receivers, base station power amplifiers, and linear/logarithmic amplifier drivers.

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