Allicdata Part #: | HS1AM2G-ND |
Manufacturer Part#: |
HS1A M2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A DO214AC |
More Detail: | Diode Standard 50V 1A Surface Mount DO-214AC (SMA) |
DataSheet: | HS1A M2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04053 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The HS1A M2G Single Rectifier Diodes represent the highest speed and voltage. These diodes offer the combination of peak repetitive overload and direct current surge capability for both low-voltage and high-voltage applications. They incorporate a low-power package rated up to 2.5A and up to 6kV. The HS1A M2G single rectifier diodes are designed for use in a variety of applications, such as power systems and automotive/industrial electronics.
Single rectifier diodes are unidirectional semiconductor devices used in power conversion and rectification. They allow current flow through them in one direction only. They are suitable for use in both AC and DC circuits. A single diode is essentially one semiconductor PN junction. These diodes have a very low forward voltage drop, meaning that they are efficient in converting AC to DC. They also allow current to be directed in the desired direction, ensuring reliability.
The use of HS1A M2G single rectifier diodes makes it possible to build power systems with higher levels of efficiency and efficiency of energy conversion. These diodes can be used in a variety of applications such as AC/DC conversion, power electronics, over-voltage protection, circuit protection, etc. The combination of peak current rating, forward voltage drop and reverse leakage current makes it possible to design low-power systems with high energy efficiency with reliable operation.
HS1A M2G single rectifier diodes are suitable for applications including power, lighting, power supplies, motor control, signal conditioning, signal switching and instrumentation. They have a wide range of applications in high-voltage power converters due to their excellent forward surge capabilities, short circuit protection and protection against reverse charging. Additionally, these diodes offer protection against EMI, surge protection and inducting noise immunity.
The working principle of a single rectifier diode is based on the use of a PN junction between a N-type semiconductor material and a P-type material. To operate properly, the junction must have an applied voltage greater than the diode\'s threshold voltage. When a forward voltage is applied, the diode allows current to flow, which is called the forward bias condition and is symbolized by the arrow inside the diode symbol. When the voltage applied is less than the diode\'s forward voltage and no bias current is present, the reverse bias condition occurs, and the arrow points away from the diode, showing that the current will not flow.
The HS1A M2G single rectifier diodes offer a unique combination of features, such as a very low forward voltage drop, high-speed response, and excellent power dissipation capabilities. Their highly reliable construction ensures maximum life and quality. Their small size makes them ideal for high-density SMD and surface-mount power systems. They offer superior surge and reverse polarization protection, EMI and circuit protection, over-voltage protection, and quiet operation. The HS1A M2G single rectifier diodes are suitable for a wide range of applications, from low-power supply regulation to high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
HS1AL RVG | Taiwan Semic... | 0.05 $ | 3000 | DIODE GEN PURP 50V 1A SUB... |
HS1A M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
HS1AL RHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL MHG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL MQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL RQG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1A R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
HS1AL M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL MTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL RTG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL R3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL RFG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1AL RUG | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A SUB... |
HS1A14SA | APEM Inc. | 69.52 $ | 14 | SWITCH THMBSTK CASTLE 100... |
HS1A12SA | APEM Inc. | 115.54 $ | 12 | SWITCH THMBSTK CASTLE 100... |
HS1A24GA | APEM Inc. | 151.69 $ | 51 | SWITCH THMBSTK CASTLE 10M... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...