Allicdata Part #: | HS1ALR3G-ND |
Manufacturer Part#: |
HS1AL R3G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | HS1AL R3G Datasheet/PDF |
Quantity: | 1000 |
7200 +: | $ 0.04489 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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The HS1AL R3G is a silicon rectifier diode easily recognized by its small package and designed to provide efficient switching applications in many common electrical devices. This device is typically used in high frequency power supplies, voltage regulators, switching circuits and many other applications.The HS1AL R3G device is a one-way switch; it will allow current to flow through it easily in only one direction. When an adequate voltage is applied to the anode terminal, electrons are attracted and allowed to flow freely in one direction towards the cathode, this is known as forward bias. When the applied voltage is reversed, no current will flow through the device, this is known as reverse bias. This feature makes the device an effective switch due to its ability to rapidly switch between these two states.The HS1AL R3G device is specifically designed to address the increased frequency requirements of modern electrical equipment. The device\'s performance is optimized at a frequency of up to 1GHz, with a reverse recovery time of 94ns, a maximum forward current of 1A, and a maximum reverse voltage of 200V. These features allow the device to provide quick switching in high power and high frequency environments.In addition to its frequency and switching abilities, the HS1AL R3G also provides excellent thermal properties. The device has a thermal resistance of 2.6°C/W, and its small size allows it to dissipate heat quickly. This feature allows the device to be used in high power applications, as well as in confined spaces.The HS1AL R3G device is an excellent choice for applications requiring reliable high frequency switching capabilities in a compact package. The device\'s combination of high frequency, low thermal resistance, and excellent switching characteristics make it an ideal solution for many electrical devices. The HS1AL R3G is a versatile, reliable, and efficient silicon rectifier diode designed to provide reliable switching solutions in a variety of applications.The specific data is subject to PDF, and the above content is for reference
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