Allicdata Part #: | HS1ALRFG-ND |
Manufacturer Part#: |
HS1AL RFG |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 50V 1A SUB SMA |
More Detail: | Diode Standard 50V 1A Surface Mount Sub SMA |
DataSheet: | HS1AL RFG Datasheet/PDF |
Quantity: | 1000 |
9000 +: | $ 0.03929 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction
HS1AL RFG (also known as High Speed Single Diode Rectifier) diodes are widely used in the fields of power electronics and semiconductor circuits, due to their extreme versatility. This type of diode is specially used in applications that require fast switching speed and a high rectification efficiency.Characteristics
HS1AL RFG diodes are known for their low forward voltage drop, high maximum repetitive peak reverse voltage, and fast switching speed. They are available as both discrete and surface mount components, with either through-hole and surface mount packages, depending on the application.The maximum forward voltage drop of the HS1AL is usually below 0.5V, and the maximum repetitive peak reverse voltage can range from 200V to 1000V, depending on the specific device. The forward current carrying capacity of the device is usually around 3A, with a maximum capacitance of around 100pF at 1kHz.Application Fields
HS1AL RFG diodes offer a wide range of capabilities, making them a great choice for power electronics applications. They can be used as signal conditioners, voltage clampers, and as rectifiers for DC power supplies. Additionally, they are commonly used as switching devices due to their high-speed switching speed.These diodes can also be used as EMI (electromagnetic interference) filters. The high speed switching of the device helps to reduce the level of interference generated by an electronic circuit. Additionally, the device offers low reverse leakage current and is suitable for use in high-speed applications.Working Principle
When the HS1AL RFG diode is conducting, the reverse voltage is reduced to a minimum value, which is usually around 0.2V. This low value allows a large amount of current to pass through the diode, resulting in a low-level voltage across the diode, with the positive terminal at the anode side and the negative terminal at the cathode side.When the device switches off, the reverse voltage increases, resulting in a higher-level voltage across the diode. This voltage is known as the reverse recovery voltage, and it is necessary to prevent the diode from re-conducting when the current passes through it.Conclusion
HS1AL RFG diodes are widely used in applications that require fast switching speeds and high rectification efficiency. These diodes offer a wide range of capabilities, including signal conditioning, voltage clamping, and rectification for DC power supplies. Additionally, they can be used as EMI filters, due to their high-speed switching capabilities. The working principle of the device is to reduce the reverse voltage to a minimum value when it is conducting, and increase the reverse voltage to a higher level when it is switched off.The specific data is subject to PDF, and the above content is for reference
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