Allicdata Part #: | HS1MLMHG-ND |
Manufacturer Part#: |
HS1ML MHG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1A SUB SMA |
More Detail: | Diode Standard 1A Surface Mount Sub SMA |
DataSheet: | HS1ML MHG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.04234 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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High-speed Metal-Halide Gas Sensors (HS1ML MHG) are used in many application fields, such as automotive, industrial and medical, due to their superior sensitivity to a variety of gasses and responsiveness to sudden changes in concentration of the target gas. HS1ML MHG sensors are well-suited for detecting combustible and dangerous hazardous gasses in confined spaces. The working principle behind these types of sensors is based on a specific reaction between the target gas and a semiconductor diode-based rectification process.
Semiconductor diodes are the components that enable the detection of the target gases. They are typically made using heavily doped N-type and P-type materials. When exposed to the target gas, the P-type semiconductor becomes charged by releasing electrons and the N-type semiconductor becomes depleted by receiving electrons. This charge/discharge process basically creates a potential difference across the diode, increasing its capacitance. By measuring this increase in capacitance, the HS1ML MHG sensors can detect the presence and concentration of the target gas.
The specific type of diode used in HS1ML MHG sensors is the single, also known as the Schottky or tunnel diode. Single diodes are distinct due to their p-n junction being covered with a positively charged metal. This layer of metal allows current to flow more easily, enabling the diode to have a higher breakdown voltage as compared to other types of diodes. Moreover, single diodes are capable of operating at high frequencies and generate relatively low power, allowing for more efficient operation of HS1ML MHG sensors.
In conclusion, HS1ML MHG sensors are very useful in a variety of applications and are made possible by the use of single semiconductor diodes. Single diodes are characterised by their p-n junction being covered by a positively charged metal layer and their ability to operate at higher frequencies with lower power consumption. These features make single diodes the ideal choice for HS1ML MHG sensors and explains why they are categorized under Diodes - Rectifiers - Single.
The specific data is subject to PDF, and the above content is for reference
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