HS1ML RVG Discrete Semiconductor Products |
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Allicdata Part #: | HS1MLRVGTR-ND |
Manufacturer Part#: |
HS1ML RVG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1KV 1A SUB SMA |
More Detail: | Diode Standard 1000V 1A Surface Mount Sub SMA |
DataSheet: | HS1ML RVG Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05292 |
6000 +: | $ 0.04763 |
15000 +: | $ 0.04234 |
30000 +: | $ 0.03969 |
75000 +: | $ 0.03528 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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A High Speed1ML RVG is a type of rectifier that is part of the diode class. Rectifiers are devices used for the rectification of alternating current (AC) into direct current (DC). It performs this essential function by allowing the current flow in only one direction. A system has two components, the anode and the cathode. The anode is the positive terminal and the cathode is the negative terminal. In this case, the anode is used to supply the current out of the device and the cathode receives the current.
The High Speed1ML RVG is predominantly made of silicon, making it modular and extremely useful in tightly packed electronic systems. Its properties make it ideal for use in high speed communication and imaging applications. They are also used as a secondary rectifier in power supplies, providing redundancy and minimising electrical interference. When compared to other rectifiers, the High Speed1ML RVG offers superior efficiency, making them ideal for electric vehicles, solar energy systems, as well as many other energy generation or distribution applications.
A major advantage of the High Speed1ML RVG is the speed at which it operates. The device is significantly faster than many other rectifiers, offering a diode recovery time of just under one nanosecond. This is important for applications that require minimal current ripple and reduced distortion in the current wave form. This makes it the preferred device for power supplies that require high speed operation and low ripple.
The High Speed1ML RVG is able to perform its rectifying duty primarily due to its V-I characteristics. These characteristics involve the current through and voltage across the device. When the V-I characteristics match that of a linear diode, the device operates as a diode and rectifier. The diode feature of the High Speed1ML RVG is such that the resistance only declines when the voltage across the device is above a certain threshold. This threshold is known as the break-over voltage and the VCBR of the High Speed1ML RVG is typically 10 volts.
The High Speed1ML RVG’s capacitance is also important to consider when assessing its performance. This is because the device’s input capacitance is somewhat higher than that of a standard rectifier. This leads to a greater voltage drop across the device when the current is increasing sharply. This means that the device must be able to handle a large amount of current if it is to perform its rectifying duties.
As its name suggests, the High Speed1ML RVG is optimized for high speed applications such as those found in communication and imaging. This optimization results in low power consumption and high efficiency, as well as very high switching speeds. Since this type of rectifier also has an excellent temperature rating, it is ideal for use in environments where it will be exposed to extreme temperatures.
Overall, the High Speed1ML RVG is an efficient and reliable rectifier that is well suited to many modern applications. Its characteristics make it particularly well-suited to applications where high speed, low power consumption and low ripple are of the utmost importance. Its excellent temperature rating means that it is also suitable for use in extreme environments, making it a first-choice when it comes to power efficiency.
The specific data is subject to PDF, and the above content is for reference
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