Allicdata Part #: | HS1MLRFG-ND |
Manufacturer Part#: |
HS1ML RFG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 1A SUB SMA |
More Detail: | Diode Standard 1A Surface Mount Sub SMA |
DataSheet: | HS1ML RFG Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04234 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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High speed 1 MHz rectifiers have become increasingly sought-after components in the industry today. These rectifiers frequently have applications in data transmission systems, providing an efficient, laser-powered extraction and storage of data. For example, high speed 1 MHz rectifiers can be used in telecommunications systems as a source of communication. They can also be used in various electrical and electronic systems, such as power supplies, motor control systems and other types of digital systems.
A high speed 1 MHz rectifier, also known as an HS1ML RFG, relies on the action of a Laser Diode (an optically powered device) to create a high-speed displacement current in a suitable semiconductor material. By using a semiconductor material, the device enables efficient extraction of electrical energy from the laser diode, as well as conversion of this energy into a signal suitable for data transmission.
An HS1ML RFG uses a semiconductor material, most commonly silicon, as its active medium. The silicon is then processed and bonded using a process known as photolithography, which deposits layers of aluminium onto the silicon structure. This aluminium structure forms the high speed rectifier, enabling efficient removal and storage of electrical energy as well as conversion of this energy into a signal suitable for data transmission.
The basic working principle of an HS1ML RFG is quite simple. A high speed laser pulse is fired at the semiconductor material, which ionises the material, allowing electrons to move freely through the material and create displacement current. This displacement current generates a field around the rectifier, creating a "capacitance" effect, while also acting as a low-impedance switch, further enabling theefficient storage and retrieval of electrical energy. This energy can then be converted into a signal or digital signal for data transmission.
In addition to providing efficient storage and retrieval of electrical energy, a high-speed rectifier such as the HS1ML RFG is also capable of providing a low-impedance switch for improved performance, providing enhanced speed and reliability. Moreover, the device is also very reliable, with a very low failure rate, making it ideal for a wide range of applications.
High speed 1 MHz rectifiers are a key component for optical data transmission systems. By providing an efficient extraction and storage of electrical energy, as well as a reliable low-impedance switching capability, HS1ML RFG devices can ensure high-speed, reliable data transmission.
The specific data is subject to PDF, and the above content is for reference
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