HSMP-381B-TR2G Allicdata Electronics
Allicdata Part #:

HSMP-381B-TR2G-ND

Manufacturer Part#:

HSMP-381B-TR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Broadcom Limited
Short Description: DIODE PIN ATTENUATOR SGL SOT-323
More Detail: RF Diode PIN - Single 100V 1A SOT-323
DataSheet: HSMP-381B-TR2G datasheetHSMP-381B-TR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 100V
Current - Max: 1A
Capacitance @ Vr, F: 0.35pF @ 50V, 1MHz
Resistance @ If, F: 3 Ohm @ 100mA, 100MHz
Operating Temperature: 150°C (TJ)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Description

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The HSMP-381B-TR2G is a diode specifically designed for use in high frequency RF circuits. It is a silicon (Si) PIN diode featuring a low capacitance and high isolation. As a result, it is commonly used in low noise amplifiers, switching circuits, mixers, oscillators, and other radio frequency (RF) circuits.

The HSMP-381B-TR2G features an inductive structure, which is designed to minimize parasitic effects and improve RF performance. This diode is specifically designed for use in low noise amplifiers and mixers, where low inductance and high isolation are needed. The HSMP-381B-TR2G also offers excellent switching characteristics, making it suitable for higher frequency applications.

The working principle of the HSMP-381B-TR2G is based on the fact that it is a PIN diode. A PIN diode is a type of semiconductor that has an intrinsic layer of undoped silicon placed between two doped silicon layers. This intrinsic layer produces a large resistance to current, which allows the diode to act as a switch when forward or reverse voltage is applied.

The forward voltage of the HSMP-381B-TR2G is typically in the range of 0.1V-1.2V. When a forward voltage is applied to the diode, the PIN diode portion of the device will become conducting, allowing current to flow through the diode. Conversely, when a reverse voltage is applied to the diode, it will become highly resistive, blocking current from flowing through the diode.

The HSMP-381B-TR2G is also designed for high power applications. It features an integrated heatsink and a rating of 500 mA on peak current. The device also has a power dissipation rating of 2W, allowing it to handle higher power requirements while maintaining an acceptable level of performance.

In conclusion, the HSMP-381B-TR2G is a silicon PIN diode designed for use in high frequency RF circuits. It features a low capacitance and high isolation, making it ideal for low noise amplifiers and mixers. The diode is also designed for high power applications and has an integrated heatsink and rating of 500mA on peak current. Finally, the working principle of the HSMP-381B-TR2G is based on the fact that it is a PIN diode, which allows the diode to act as a switch when forward or reverse voltage is applied.

The specific data is subject to PDF, and the above content is for reference

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