Allicdata Part #: | HSMP-389Z-BLKG-ND |
Manufacturer Part#: |
HSMP-389Z-BLKG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Broadcom Limited |
Short Description: | DIODE PIN RF SWITCH 100V SOD-323 |
More Detail: | RF Diode PIN - Single 100V 1A SOD-323 |
DataSheet: | HSMP-389Z-BLKG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Diode Type: | PIN - Single |
Voltage - Peak Reverse (Max): | 100V |
Current - Max: | 1A |
Capacitance @ Vr, F: | 0.3pF @ 5V, 1MHz |
Resistance @ If, F: | 2.5 Ohm @ 5mA, 100MHz |
Operating Temperature: | 150°C (TJ) |
Package / Case: | SC-76, SOD-323 |
Supplier Device Package: | SOD-323 |
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Introduction: The HSMP-389Z-BLKG is a p-n-p-n diodes radio frequency (RF) power device. It has been mainly used for RF power amplification in cellphones and wireless applications. The HSMP-389Z-BLKG is a robust device with a high breakdown voltage, low gate-to-source capacitance, low gate-to-drain capacitance, an extremely fast switching speed and high power output.
Applications: The HSMP-389Z-BLKG is widely used in various RF applications, including cellphones and wireless networks. It is also used to amplify a signal in the microwave frequency range, usually in the GSM, DCS and UMTS/WCDMA bands. In addition, it is commonly employed as a power amplifier in various military communications and telecommunications systems.
Working Principle: The HSMP-389Z-BLKG is based on the principle of quasi-resonant tunneling (QRT). In QRT, an electron is accelerated toward a roughly resonant quantum well and tunneling occurs when the electron has reached the appropriate energy. This results in an extremely fast switching and low gate-to-drain capacitance. The device also has a low gate-to-source capacitance and a high breakdown voltage, resulting in improved efficiency.
Design Considerations: The HSMP-389Z-BLKG must be designed with a carefully considered electrical layout. The gates must be carefully positioned to provide the correct voltage and current levels to the drain. In addition, the device must be designed with a wide package to allow for the high power output required. Additionally, the device must be designed with a suitable frequency range, as the device is not suitable for operation at frequencies below 30MHz.
Conclusion: The HSMP-389Z-BLKG is an extremely robust and reliable p-n-p-n diodes RF power device. It has a high breakdown voltage, a low gate-to-source and gate-to-drain capacitance, an extremely fast switching speed, and a high power output. Furthermore, it is widely used in RF applications, including cellphones and wireless networks, as well as in military and telecommunications systems. Careful electrical design and consideration of suitable frequency ranges are critical when using this device.
The specific data is subject to PDF, and the above content is for reference
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