HSMP-3814-TR1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (Max):	100V
Current - Max:	1A
Capacitance @ Vr, F:	0.35pF @ 50V, 1MHz
Resistance @ If, F:	3 Ohm @ 100mA, 100MHz
Operating Temperature:	150°C (TJ)
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	HSMP-3814

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The HSMP-3814-TR1 is a microwave field effect transistor (FET) fabricated with a Pseudomorphic High Electron Mobility Transistor (PHEMT) process. Allowing for better results due to conventional FETs by incorporating a low noise figure, high breakdown voltage, and improved linearity. As such, the HSMP-3814-TR1 is now a preferred device within the military and aerospace markets, as it is suitable for a variety of applications, including general-purpose broadband amplifiers, automotive radio, and instrumentation.The basic function of the HSMP-3814-TR1 is to provide a high-level RF power output with a low noise figure and high Bandwidth. This provides superior performance compared to conventional FETs, offering improved linearity and high breakdown voltage.The HSMP-3814-TR1 operates by having the input applied to the Gate. This causes the Gate voltage to modulate the potential that is created in the P-type region, forming a “pinch-off” or “pinched” region that is not conducting. This causes an increased resistance between the Drain and the Source, resulting in an amplified version of the input.The HSMP-3814-TR1 is ideal for many applications due to its unique range of features such as improved linearity and broadcast band noise performance, microwave power rating, high gain, versatility of operation, and low maintenance costs. This can make it suitable a range of applications, including:- Military communication systems. - Radar systems. - General-purpose amplifiers. - Automotive radio systems. - Instrumentation and medical equipment. - Cellular base-stations and PCS. - Wideband point-to-point radios.The HSMP-3814-TR1 is a silicon-based FET chip, and as such, it offers superior performance when compared to conventional FETs. It has a low-noise figure and wide-bandwidth, giving it an improved performance over the more traditional FETs. The HSMP-3814-TR1 also has a higher breakdown voltage, which results in a reduced noise floor and improved linearity. The HSMP-3814-TR1 also has a directional feature that allows for one-way transmission. This can be beneficial for certain electromagnetic applications, such as for directional RF communication. The HSMP-3814-TR1 is an ideal device for applications that require high-frequency performance, such as for radar, satellite, or UAV systems. It is also used in instrumentation and medical equipment, as well as broadcast base stations and PCS. As the HSMP-3814-TR1 has a wide range of features that provide superior performance, it can be a beneficial choice for a variety of applications. Overall, the HSMP-3814-TR1 is a microwave field effect transistor (FET) fabricated with a Pseudomorphic High Electron Mobility Transistor (PHEMT) process. It has a low noise figure, high breakdown voltage, and improved linearity compared to conventional FETs, making it a great choice for a variety of applications. It is suitable for general-purpose broadband amplifiers, automotive radio systems, instrumentation, and medical equipment, as well as cellular base-stations and PCS. The HSMP-3814-TR1 offers superior performance, making it a preferred device for the military, aerospace, and broadcasting industries.

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