IDH05G120C5XKSA1 Allicdata Electronics
Allicdata Part #:

IDH05G120C5XKSA1-ND

Manufacturer Part#:

IDH05G120C5XKSA1

Price: $ 3.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE SCHOTTKY 1.2KV 5A TO220-2
More Detail: Diode Silicon Carbide Schottky 1200V 5A (DC) Throu...
DataSheet: IDH05G120C5XKSA1 datasheetIDH05G120C5XKSA1 Datasheet/PDF
Quantity: 1024
1 +: $ 3.55320
10 +: $ 3.19284
100 +: $ 2.61620
500 +: $ 2.22715
1000 +: $ 1.87832
Stock 1024Can Ship Immediately
$ 3.91
Specifications
Series: CoolSiC™
Packaging: Tube 
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 33µA @ 1200V
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Description

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IDH05G120C5XKSA1 is an semiconductor device that belongs to the class of diodes - rectifiers - single. It is designed using Infineon\'s powerful MOS controlled rectifier (MCR) technology. The IDH05G120C5XKSA1 is a 1200 V-rated, 200 ns-recovery time rectifier diode optimized for Switch Mode Power Supply (SMPS) power factor correction (PFC) and motor drive applications. It offers easy paralleling, a low profile and low forward voltage drop to increase system efficiency enabling high power density designs.

Its application field may vary from industrial, automotive, or even residential fields. Cases of application include DC-DC converters, low EMI ballasts, lighting applications, solar inverters and any other SMPS applications requiring fast and soft switching. Its current rating is 12A with a maximum junction temperature of 175°C.

So how does the IDH05G120C5XKSA1 work? Basically, it utilizes MOS controlled rectifier (MCR) technology. This is an innovative technology for high power applications in which a power MOSFET is integrated in the circuit with a low voltage drop, at low conduction losses. An MCR is a fast switching device switching between two states, either on or off. The operation of the MCR is similar to a thyristor. When the applied voltage reaches a certain breakdown voltage (VBR) of the DIAC, the thyristor changes its state and starts to conduct current. MCRs have a much lower conduction losses then IGCT Thyristors due to the lower forward voltage, enabling the design of low-loss systems. The low conduction losses of the MCR makes it possible to design converters with higher power densities and up to three times better efficiency.

All in all, the IDH05G120C5XKSA1 is a powerful, fast-switching rectifier diode that can be applied in various fields, and its MCR technology makes it possible to design systems with high power density and improved efficiency. Its high-voltage rating and easy paralleling capabilities make it ideal for many applications, such as DC-DC converters, inverters, and motor drives.

The specific data is subject to PDF, and the above content is for reference

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