Allicdata Part #: | IDH10G65C5ZXKSA1-ND |
Manufacturer Part#: |
IDH10G65C5ZXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE SCHOTTKY 650V 10A TO220-2 |
More Detail: | Diode Silicon Carbide Schottky 650V 10A (DC) Throu... |
DataSheet: | IDH10G65C5ZXKSA1 Datasheet/PDF |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | CoolSiC™ |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650V |
Current - Average Rectified (Io): | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 10A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 180µA @ 650V |
Capacitance @ Vr, F: | 300pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are commonly used in electrical and electronic designs in applications such as power rectification, signal conditioning, and power switching. IDH10G65C5ZXKSA1 is a type of diode, specifically classified as a single rectifier. Hence, its main application field is as a power rectifier. Understanding IDH10G65C5ZXKSA1 power rectification performance requires knowledge of its working principle and technical specifications.
A diode is an electronic component with two terminals which, when a suitable potential difference is applied across it, allows an electric current to flow in one direction only. This makes it suitable for power rectification, as current can be rectified in order to generate a steady DC voltage. A single diode rectifier comprises diodes wired in series, in order to provide a greater voltage drop. IDH10G65C5ZXKSA1 is a power rectifier specifically designed for high-power applications.
IDH10G65C5ZXKSA1 contains a single rectifier diode with a silicon junction that can withstand high voltage and current surges. The device has a minimum reverse breakdown voltage of 600V, and a rated forward surge load current of 108A. Furthermore, it has an absorptive reverse leakage current of 1.5uA and a peak reverse voltage of 650V. These properties make it suitable for a range of power rectification applications, including power supply circuits, automotive high-voltage systems, and industrial automation systems.
The main phenomenon driving the working principle of IDH10G65C5ZXKSA1 is reverse breakdown. This occurs when a large reverse voltage is applied to a diode, causing the resistance of the junction to drop rapidly. When the breakdown voltage exceeds a certain level, the resistance drops to near zero and a high current is able to flow through the diode. Reverse breakdown is used in power rectification, as the diode can be connected across an AC voltage source in reverse-biased configuration, so that the forward and reverse currents alternate as the voltage changes. This enables current to be rectified into a steady, unidirectional current.
When selecting a diode for power rectification, it is important to compare its technical specifications with those of other devices in order to ensure that it is suitable for the intended application. IDH10G65C5ZXKSA1 is a highly robust single rectifier with an impressive surge load rating and breakdown voltage, making it suitable for a range of high-power rectification applications.
The specific data is subject to PDF, and the above content is for reference
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