IDT71P74604S250BQ8 Allicdata Electronics
Allicdata Part #:

IDT71P74604S250BQ8-ND

Manufacturer Part#:

IDT71P74604S250BQ8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 18M PARALLEL 165CABGA
More Detail: SRAM - Synchronous, QDR II Memory IC 18Mb (512K x ...
DataSheet: IDT71P74604S250BQ8 datasheetIDT71P74604S250BQ8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71P74
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 8.4ns
Series: --
Clock Frequency: 250MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Synchronous, QDR II
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IDT71P74604S250BQ8 is a type of memory that is manufactured by In­ter­con­nec­tion De­vices, Inc. (IDT). It is a general purpose static random access memory (SRAM) and is used for various applications in computing, communications, and consumer electronics. The device is a 248-pin, low-power SRAM designed for high-performance and high-density applications such as digital signal processors, network processing computers, storage server applications, and microcontroller applications.

In terms of operation, the IDT71P74604S250BQ8 contains four banks of 64K x 16 bits of SRAM data. The device has an asynchronous bus width of either 8 or 16 bits, which is selectable by the user via the address pins during power-on reset. The device also features data retention when power is removed and power-save mode. It is designed to sustain operating temperature ranges between 0 and 70 degrees C. In terms of power consumption, the IDT71P74604S250BQ8 has a typical active power consumption of 2.2 W and a standby power consumption of 0.2 W.

The IDT71P74604S250BQ8 offers a wide array of features including a fast-page cycle for quick random access within the device, write and read protection for added security, bank select for memory size flexibility and easy user addressing, and a data output-enable pin for fast multiple-chip operation. It also has built-in ECC and redundant bits for data protection, as well as integrated power-on reset and error-detection circuitry. The device is also software programmable, allowing users to change the configuration of the device on the fly.

In terms of performance, the IDT71P74604S250BQ8 is capable of achieving an access time of 65 ns, a cycle time of 85 ns, and a static power dissipation of 300 mW/MHz. It has a data throughput rate of 250 MB/s, an operating frequency of up to 100 MHz, and is capable of executing up to 51 MIPS. The device also has a maximum interleaving factor of 4 and a maximum address latency (read) of 6 cycles.

The IDT71P74604S250BQ8 is a reliable and powerful memory solution for various applications. It can be used in applications that require high-speed data throughput, low-power consumption, and reliable data protection. With its fast-page cycle and integrated ECC, the IDT71P74604S250BQ8 is well-suited for applications such as digital signal processors, network processing computers, next-generation storage server applications, and microcontroller applications.

The specific data is subject to PDF, and the above content is for reference

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