IDT71V016SA15YI Allicdata Electronics
Allicdata Part #:

IDT71V016SA15YI-ND

Manufacturer Part#:

IDT71V016SA15YI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 1M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: IDT71V016SA15YI datasheetIDT71V016SA15YI Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V016
Description

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The IDT71V016SA15YI is a high performance SRAM (Static Random Access Memory) device. It is an ideal choice for applications that require high performance, low power usage, and dependable data storage. In this article, we will cover the application field and working principle of the IDT71V016SA15YI.

Application Field

The IDT71V016SA15YI is a high-performance SRAM device that is usually used in embedded systems, automotive lighting systems, display systems, and factory automation. This device is also often used in embedded systems such as set-top boxes, satellites, and telecom systems. Its versatile range of features makes it suitable for a variety of applications. It is designed with low power consumption, making it a great choice for applications where power consumption is critical.

The IDT71V016SA15YI is a fast SRAM device, meaning it can transfer data at high speeds. This makes it suitable for use in applications where fast data processing and retrieval are required. Additionally, it has a high level of data integrity, making it reliable for mission-critical applications where data accuracy is essential.

Working Principle

The working principle of the IDT71V016SA15YI is based on the operation of SRAM cells. SRAM cells are a type of non-volatile memory that store data in an electrical circuit made up of transistors. As electrical current flows through the circuit, it changes the state of the transistors from 0 to 1, representing a binary bit of data. Each SRAM cell contains two transistors and two inverters, making the data retention and recall process very fast.

The IDT71V016SA15YI is designed to run at a clock speed of up to 100 MHz. This means that it can quickly access and transfer data based on its stored memory cells. Additionally, the device features error correction circuits that help reduce the chances of data errors or corruptions.

The IDT71V016SA15YI is a reliable and fast SRAM device with a wide range of applications. It is designed to provide high-speed data access and transfer while consuming low power. Additionally, its error correction circuits help to ensure data accuracy and integrity, making it suitable for mission-critical applications. Overall, the IDT71V016SA15YI is an ideal solution for a variety of memory applications.

The specific data is subject to PDF, and the above content is for reference

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