IDT71V256SA20YI Allicdata Electronics
Allicdata Part #:

IDT71V256SA20YI-ND

Manufacturer Part#:

IDT71V256SA20YI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: IDT71V256SA20YI datasheetIDT71V256SA20YI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: IDT71V256
Description

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Memory is a crucial component in modern electronics. It enables us to store data or programs for future use. The IDT71V256SA20YI is a Dual-Port static RAM (Random Access Memory) which is designed for a wide range of applications. It features very low power consumption, fast access time and high performance.

The IDT71V256SA20YI is used in bus interfaces and other low-power applications. It is composed of 256Kbits of static RAM array organized as 2048 x 128 bits. The dual port memory allows simultaneous access by both the CPU and a dedicated host controller. This makes it suitable for applications such as cache memory, message buffering, and communications applications.

The IDT71V256SA20YI has a low power standby mode which is enabled by the built-in auto-sleep mode feature. This low-power mode is activated when the memory access is suspended. The IDT71V256SA20YI can also generate a hardware interrupt if the memory access is not resumed for a specified duration.

The IDT71V256SA20YI features a metal oxide semiconductor field effect transistor for reading and writing data. It is based on a static RAM architecture which does not require refreshing. This significantly reduces the power consumption compared to a dynamic RAM architecture. The IDT71V256SA20YI is available in both 8-pin and 16-pin packages, which makes it suitable for a broad range of applications.

The IDT71V256SA20YI can operate at a voltage range of 1.65 to 3.6 volts. Its power consumption is very low and is estimated at just 65mW during read/write operations. Its access time is also very fast, with a 120ns read time, and 200ns write time. The IDT71V256SA20YI also features an internally self-timed write cycle with a 130ns write cycle time.

The IDT71V256SA20YI is built to be compatible with standard memory interface standards such as the Intel 80x86, 68000, and Micro Channel Architecture. It requires minimal additional hardware and has hot-swap capabilities so it can be used without disturbing the operation of the system when power is turned off and on. It also features a burst operation mode which allows the user to read or write a specific number of data words with a single command for faster throughput. It features up to 16 clock setup/hold delay cycles for improved setup/hold margins.

In conclusion, the IDT71V256SA20YI Dual-Port static RAM is an excellent choice for a wide range of applications due to its low power consumption, fast access time and high performance. Its compatibility with standard memory interface standards, hot-swap capabilities and burst operation mode make it optimal for bus interfaces and other low-power applications.

The specific data is subject to PDF, and the above content is for reference

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