IDT71V416VL15Y8 Allicdata Electronics
Allicdata Part #:

IDT71V416VL15Y8-ND

Manufacturer Part#:

IDT71V416VL15Y8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 44SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416VL15Y8 datasheetIDT71V416VL15Y8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ
Base Part Number: IDT71V416
Description

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Memory: IDT71V416VL15Y8 Application Field And Working Principle

Integrated Device Technology’s IDT71V416VL15Y8 is a dynamic random access memory (DRAM) device that offers high speed, low power consumption and scalability, making it suited for a wide range of applications. In this article, we will discuss the application field and working principle of the IDT71V416VL15Y8.

Application Field

The IDT71V416VL15Y8 is a currently-available DRAM device from IDT that is compatible with both Xaui (x10/x25) and PCIe (x1.0a/x2.0) technologies. These features make the IDT71V416VL15Y8 suitable for either embedded device or design applications. Additionally, its low power consumption makes the device suitable for battery-powered applications that require extended run-times. Furthermore, the IDT71V416VL15Y8 is compatible with multiple operator systems, including Unix, Linux, and Microsoft Windows. As such, it is suited for mobile devices including smartphones and tablets.

Working Principle

The IDT71V416VL15Y8 utilizes asynchronous SRAM as an intermediate stage to store information between two sets of registers. The two sets of registers are connected through a two-way data path. This two-way data path is enabled through the use of two independent read and write buses. The peak read/write throughput for this device can reach 25 megabytes per second.

The device is also able to handle multiple transactions simultaneously. This is done through the use of a variable latency multiplexer that allows the chip to switch between different transactions quickly. Furthermore, the device is able to protect the data in one register while transferring data between the two registers. This is done by using a parity error check to ensure integrity of the data.

The IDT71V416VL15Y8 also supports a wide range of functions to ensure failover safety. This includes an auto-refresh mode that ensures a minimum refresh cycle rate and an auto-packet recovery mode that ensures data consistency in the event of a packet error.

Conclusion

The IDT71V416VL15Y8 is a DRAM device from IDT that is suited for use in both embedded and design applications. Its low power consumption and compatibility with multiple protocols and operator systems make it suitable for a wide range of applications. Additionally, its two-way data path and read/write speed makes it suitable for fast and reliable data transfer. Furthermore, its support for multiple transactions, parity error check, and failover safety functions make the device highly reliable and resilient against errors and system crashes.

The specific data is subject to PDF, and the above content is for reference

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