IDT71V35761S166BQI

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Memory is an essential component of any computer system as it provides a permanent storage for data and programs. The IDT71V35761S166BQI is a memory device that is used in various electronic systems. It is a low voltage dual-port Static Random Access Memory (SRAM) device. The device is composed of two 16K x 8 or a single 32K x 8 bit Static Random Access Memory cell array, two control registers and an enable input. The IDT71V35761S166BQI has a total memory capacity of 256K bits, a supply voltage of 3.3V, a data output voltage of 2.5V and a sample frequency of 20MHz. It is designed for applications that require fast access and minimal power consumption.

The main application field of the IDT71V35761S166BQI is memory expansion and buffering. It is often used in devices that need to store data and programs for later retrieval, such as embedded systems, microprocessors, control logic systems, and industrial automation. The device can also be used for data buffering and FIFO (First In First Out) operations.

The working principle of the IDT71V35761S166BQI is similar to that of other SRAMs. When a write control signal (WEN) is applied, the data is stored on the sense-amplifier array and the memory cells are updated. When a read control signal (REN) is applied, the data is retrieved from the memory cells and sent to the output pins. The device also has a write protect signal (WPEN), which can be used to protect the data from accidental overwriting.

The IDT71V35761S166BQI is a low voltage and high speed memory device for various applications. It is designed for applications that require reliable storage with minimal power consumption. The device provides high access speed, low power consumption and improved programming flexibility. Its features make it an ideal choice for applications that require dependable storage and fast access times.

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