IDT71V3577SA75BGGI8 Allicdata Electronics
Allicdata Part #:

IDT71V3577SA75BGGI8-ND

Manufacturer Part#:

IDT71V3577SA75BGGI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Par...
DataSheet: IDT71V3577SA75BGGI8 datasheetIDT71V3577SA75BGGI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)
Base Part Number: IDT71V3577
Description

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Memory is an important component of computer science. IDT71V3577SA75BGGI8, which is a memory device manufactured by the Integrated Device Technology, Inc. (IDT), can be categorized as such. It is a high speed CMOS Static Random Access Memory device that is designed primarily for high speed memory applications. It is also used in multiple big data applications for faster data processing, especially in the finance, retail, health and other service industries. In addition, it also plays an important role in the course of system integration work.

The IDT71V3577SA75BGGI8 utilizes a fully synchronous design, which means writing and reading data is in sync. It consists of a clocking system of two independent dynamic shift registers and two 4-bit bidirectional synchronous ports to access data from the registers. Every port has two independent address counters and input gauges, which allows the user to regulate the packet data in the operational environment. With an integrated Single Event Upset(SEU) Correction logic, IDT71V3577SA75BGGI8 is resistant to radiation and seismic disturbances, making it an ideal choice for harsh environment applications.

The device operates with an external clock signal. It also has 4 input ports (input strobes) and 4 output ports (output strobes). It has an associated address bus to access different registers in the memory. It accesses both data and address 8-bits wide with high speed. The IDT71V3577SA75BGGI8 utilizes an internal pipeline architecture with buffer register which increases speed, performance, and reduce power consumption. The device also has a sleep mode which helps reduce power consumption in a low memory activity state. It operate at 3.3V power and has a current consumption of 6mA at 125MHz operation frequency.

When it comes to the memory loading process, the IDT71V3577SA75BGGI8 provides two options, which are an Atomic Memory Loader (AML) and Parallel Memory Loader (PML). The AML allows for loading data parallel and sequentially into memory in preprogrammed steps at run-time. It also provides CRC error checking capabilities and memory overloading protection. The PML is a single step parallel loading process, it only works with external data in serial form and then translates the serial data into parallel format.

In summary, IDT71V3577SA75BGGI8 is a high speed, low power CMOS static random access memory designed for memory applications that require fast data processing and protection from radiation and seismic disturbances. With the integrated AML and PML loading process and other features, it is an ideal choice for applications in finance, retail, health, and other service industries.

The specific data is subject to PDF, and the above content is for reference

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