IDT71V416VS15BEGI8 Allicdata Electronics
Allicdata Part #:

IDT71V416VS15BEGI8-ND

Manufacturer Part#:

IDT71V416VS15BEGI8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4M PARALLEL 48CABGA
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IDT71V416VS15BEGI8 datasheetIDT71V416VS15BEGI8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)
Base Part Number: IDT71V416
Description

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The IDT71V416VS15BEGI8 memory device is a 16K x 16-bit, low-voltage, high-speed, Quad- die SRAM designed to provide industry-leading performance and reliability. It is well-suited for various space-limited applications, such as set-top boxes, networking and communication equipment, security, and instrumentation systems.

Although the IDT71V416VS15BEGI8 memory device is small in size, its features are extraordinary. It has a fast access time of 7.0 ns, which allows it to process data quickly and accurately. The device has multiple power configurations, including LV, HV, and LV/HV, which allows the user to select the power level that best suits their application\'s needs. The IDT71V416VS15BEGI8 memory device also includes two 64-bit wide packet buses for extended internal communications, aiding in fast data transfer rates.

The device also contains low-voltage termination (LVCMOS) I/O pins, which permit faster and more reliable operations during power-up and power-down cycles. Furthermore, the IDT71V416VS15BEGI8 memory device requires a single 3.3V supply, which provides excellent power savings when compared to traditional 5V devices.

The IDT71V416VS15BEGI8 memory device is designed to operate using its asynchronous read/write architecture. This allows it to read data from a specified address in the memory in a single operation, and then perform any necessary write operations in the same operation. This capability allows the device to quickly process data without unnecessary wait times.

The IDT71V416VS15BEGI8 memory device is also designed to perform more than just reads and writes. It has multiple write-enable configurations for selective protection of data, and a built-in write buffer for low-power operations. Additionally, it has a simplenibble mode capability, which allows the user to access four 4-bit nibbles from a single address. This feature is useful for applications that require storing several small snippets of data.

The IDT71V416VS15BEGI8 memory device is a reliable and efficient memory solution for many applications. It has fast access times and a low-voltage capability, as well as a host of other features that make it an ideal choice for a wide range of applications. It is well-suited for space-limited designs, and its asynchronous architecture enables fast and reliable data processing.

The specific data is subject to PDF, and the above content is for reference

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