IFS100B12N3E4_B39

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The IFS100B12N3E4_B39 is a high-efficiency insulated-gate bipolar transistor (IGBT) power module. Developed by Infineon, these modules are specifically designed for medium- to high-power applications in industrial, telecommunications and consumer electronics applications, where an efficient switch with high speed and high voltage ratings is essential.

The compact and efficient IFS100B12N3E4_B39 module delivers outstanding voltage and current capabilities, with a maximum operating voltage of 1200V and a maximum gate current of 3A. It also offers extremely low power losses, with low on-state resistance and low switching losses. It has a high-frequency operation of up to 10kHz, and is suited for use in motor drives, motor control, solar inverters, UPS systems and other high-performance power control applications.

The IFS100B12N3E4_B39 module is built around a bipolar transistor with a built-in shunting diode and two MOSFETs on one side. The bipolar transistor and the MOSFETs serve as the voltage and current sensing elements, which are connected in series to produce the desired voltage and current outputs. The shunting diode ensures that the voltage and current out of the module remains within the operating range.

This module is also equipped with an on-board bootstrap diode and snubber circuit that offers superior noise immunity and protects the IGBT from overvoltage and overcurrent conditions. This helps to improve system reliability, as well as reduce component costs and provide better control of the system.

The IFS100B12N3E4_B39 module provides superior performance in switching applications with low electromagnetic interference. It is also suitable for measuring current using a high-speed tempotronic measurement circuit. This allows faster and more accurate monitoring of current levels in applications such as motor drives, solar inverters and UPS systems.

Overall, the IFS100B12N3E4_B39 module is an excellent choice for applications requiring fast switching times, high voltage, and low power loss. Its compact size, low-power loss, high voltage ratings and low gate current offer superior performance, making it an ideal choice for high-performance power control applications. Its high-frequency operation makes it a suitable choice for use in a wide range of industrial, telecommunications and consumer electronics applications.

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