Allicdata Part #: | IFS100B12N3E4PB11BPSA1-ND |
Manufacturer Part#: |
IFS100B12N3E4PB11BPSA1 |
Price: | $ 117.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT LOW PWR ECONO |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 15... |
DataSheet: | IFS100B12N3E4PB11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 107.02700 |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 515W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.2nF @ 25V |
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IFS100B12N3E4PB11BPSA1 Application Field and Working Principle
The IFS100B12N3E4PB11BPSA1 is an insulatedgate bipolar transistor (IGBT) module from Infineon Technologies. This robust,reliable, totally integrated device offers excellent performance in medium- tohigh-power applications and has been designed to operate in harsh environmentswith a wide temperature range. IGBT modules are well suited for applications inwhich high voltage and current levels are needed.
Applications
IGBT modules are commonly used in industrial applications such as electric vehiclecontrols, medical equipment, and industrial machinery. The IFS100B12N3E4PB11BPSA1is used in a variety of industries, including automotive, agricultural,transportation, and agricultural applications. It is particularly well-suited forapplications requiring high voltage and power levels, including tractioncontrols, electric drives, and the like. This module is also found in the followingareas:
- Industrial and commercial inverter applications
- Power factor correction circuits
- Induction heating/melting
- Switched mode power supplies
- High power motor controls
- Uninterruptible Power Supplies (UPS) systems
Working Principle
IGBT modules consist of an IGBT, a diode, a control circuit, and a protectivecircuit. The IGBT and diode are connected in parallel and built onto the samesubstrate. The control circuit supplies the gate with a control signal to turn theIGBT on or off. The protective circuit monitors the voltage and current acrossthe IGBT so that if an overload is detected it can shut down the gate voltage andprotect the module.The IFS100B12N3E4PB11BPSA1 has a high blocking voltage of 1000 V and a collectorto emitter voltage of 800 V. It also has a very low gate charge, meaning that verylittle current is required to turn it on or off. This allows the module to switchrapidly and accurately, making it well-suited for motor control applications.The IGBT module is also designed to operate in a wide range of temperatures, from-50°C to +125°C, ensuring reliable operation in harsh environments.
Conclusion
The IFS100B12N3E4PB11BPSA1 is an insulated gate bipolar transistor (IGBT) modulefrom Infineon Technologies. This robust, reliable, totally integrated deviceoffers excellent performance in medium to high power applications and isdesigned to operate in harsh environments with a wide temperature range.IBS100B12N3E4PB11BPSA1 can accurately and rapidly switch between on and offstates, making it well-suited for motor control applications. In addition, itslow gate charge and wide temperature range make it ideal for applicationsrequiring high voltage and power levels.
The specific data is subject to PDF, and the above content is for reference
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