IFS100B12N3E4PB11BPSA1 Allicdata Electronics
Allicdata Part #:

IFS100B12N3E4PB11BPSA1-ND

Manufacturer Part#:

IFS100B12N3E4PB11BPSA1

Price: $ 117.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT LOW PWR ECONO
More Detail: IGBT Module Trench Field Stop Full Bridge 1200V 15...
DataSheet: IFS100B12N3E4PB11BPSA1 datasheetIFS100B12N3E4PB11BPSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 107.02700
Stock 1000Can Ship Immediately
$ 117.73
Specifications
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 515W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
Description

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IFS100B12N3E4PB11BPSA1 Application Field and Working Principle

The IFS100B12N3E4PB11BPSA1 is an insulatedgate bipolar transistor (IGBT) module from Infineon Technologies. This robust,reliable, totally integrated device offers excellent performance in medium- tohigh-power applications and has been designed to operate in harsh environmentswith a wide temperature range. IGBT modules are well suited for applications inwhich high voltage and current levels are needed.

Applications

IGBT modules are commonly used in industrial applications such as electric vehiclecontrols, medical equipment, and industrial machinery. The IFS100B12N3E4PB11BPSA1is used in a variety of industries, including automotive, agricultural,transportation, and agricultural applications. It is particularly well-suited forapplications requiring high voltage and power levels, including tractioncontrols, electric drives, and the like. This module is also found in the followingareas:

  • Industrial and commercial inverter applications
  • Power factor correction circuits
  • Induction heating/melting
  • Switched mode power supplies
  • High power motor controls
  • Uninterruptible Power Supplies (UPS) systems

Working Principle

IGBT modules consist of an IGBT, a diode, a control circuit, and a protectivecircuit. The IGBT and diode are connected in parallel and built onto the samesubstrate. The control circuit supplies the gate with a control signal to turn theIGBT on or off. The protective circuit monitors the voltage and current acrossthe IGBT so that if an overload is detected it can shut down the gate voltage andprotect the module.The IFS100B12N3E4PB11BPSA1 has a high blocking voltage of 1000 V and a collectorto emitter voltage of 800 V. It also has a very low gate charge, meaning that verylittle current is required to turn it on or off. This allows the module to switchrapidly and accurately, making it well-suited for motor control applications.The IGBT module is also designed to operate in a wide range of temperatures, from-50°C to +125°C, ensuring reliable operation in harsh environments.

Conclusion

The IFS100B12N3E4PB11BPSA1 is an insulated gate bipolar transistor (IGBT) modulefrom Infineon Technologies. This robust, reliable, totally integrated deviceoffers excellent performance in medium to high power applications and isdesigned to operate in harsh environments with a wide temperature range.IBS100B12N3E4PB11BPSA1 can accurately and rapidly switch between on and offstates, making it well-suited for motor control applications. In addition, itslow gate charge and wide temperature range make it ideal for applicationsrequiring high voltage and power levels.

The specific data is subject to PDF, and the above content is for reference

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