Allicdata Part #: | IFS150V12PT4BOSA1-ND |
Manufacturer Part#: |
IFS150V12PT4BOSA1 |
Price: | $ 286.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IPM MIPAQ-3 |
More Detail: | IGBT Module Three Phase Inverter 1200V 150A Chas... |
DataSheet: | IFS150V12PT4BOSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 260.79000 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 150A |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 65°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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The IFS150V12PT4BOSA1 is an insulated gate bipolar transistor module (IGBT). It has a low conduction and switching loss, low versus capacitance for improved switching properties, and a soft switching mode for a wide range of motor control applications. It is a 1200V/150A digital type IGBT module with flyback features. The device is designed to provide high reliability and high efficiency in the most demanding applications.
Application Field
The IFS150V12PT4BOSA1 is well suited for various motor control applications including AC and DC drives, fans, pumps, compressors, servo and motion control systems. It is also used in low frequency power supplies, welding power supplies, welding robots, solar inverters, uninterruptable power supplies (UPS), motor control systems and resonant DC-DC converters.
Working Principle
The IFS150V12PT4BOSA1 is a gate-controlled switch. It contains three sections: an emitter, a collector and a gate. To switch on, a voltage is applied to the gate, which causes current to flow through the emitter and collector sections. When current flows, the transistor is "on". When the voltage is removed, the current stops flowing, and the transistor is "off". The IFS150V12PT4BOSA1 can be operated in either the linear or saturation regions. In the linear region, the voltage across the emitter terminal increases with increasing collector current. Saturation occurs when the collector-emitter voltage reaches a certain peak level and the current flow is limited.
The IFS150V12PT4BOSA1 has a variety of features that make it well-suited for motor control applications including a low on-state voltage, a low turn-on resistance, high efficiency, and a soft turn-on mode. When operating in the linear region, the IFS150V12PT4BOSA1 can achieve a high current rating with a relatively low on-state voltage, resulting in increased efficiency. The low turn-on resistance reduces the amount of current required to switch on the transistor and allows for a faster switching speed, which is beneficial in applications such as motor control systems. Additionally, the IFS150V12PT4BOSA1 features a soft turn-on mode that removes spikes in voltage, which reduces electromagnetic interference (EMI) and improves the reliability of the system.
The IFS150V12PT4BOSA1 is a high performance IGBT module designed for various applications. It is suitable for high frequency switching and has low conduction and switching losses. It also features a soft-switching mode, which reduces EMI, and has a low total capacitance, resulting in improved switching properties. The IFS150V12PT4BOSA1 is an excellent choice for motor control applications where efficiency and reliability are paramount.
The specific data is subject to PDF, and the above content is for reference
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