IFS100V12PT4BOSA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	100A
Vce(on) (Max) @ Vge, Ic:	2.15V @ 15V, 100A
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 65°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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IFS100V12PT4BOSA1 Application Field and Working Principle

Introduction

The IFS100V12P54BOSA1 is a type of insulated gate bias switch (IGBT) module. It is a high-performance adjunct to the world-renowned BOSA family of IGBT modules. Its state-of-the-art and easy-to-use design was developed by some of the world\'s leading semiconductor manufacturers, guaranteeing superior performance and reliability in all types of medium-to-high power applications. It has been designed for use in industrial, commercial and residential applications due to its high switching frequencies and low power losses.

Application Field

The IFS100V12PT4BOSA1 is an ideal IGBT module for a variety of applications, such as medium-to-high power supplies, traction motors, induction motors, power converters, high-speed motor drives, and renewable energy systems. This module offers improved efficiency, better reliability, and higher switching frequencies, which allow for faster reaction times and improved performance.It is also ideal for automotive and transportation requirements, as its low loss characteristics, plus its capability to withstand high stress and intense vibrations, makes it an excellent option for vehicles. Additionally, this module is highly compatible with automation and industrial systems, as it offers the power capabilities, along with low current consumption, which allows devices to run effectively and continuously.

Working Principle

The working principle of the IFS100V12PT4BOSA1 module is based on insulated gate bi-polar transistor (IGBT) principles. It uses an internal VDG (voltage division grid) structure, which is connected to the base of a p-type field-effect transistor (FET) to separate the gate and collector circuits. This ensures that the gate potential of the FET is fixed, while the collector current is varied.The IFS100V12PT4BOSA1 module combines the advantages of both MOSFETs and BJTs. Its state-of-the-art design ensures that the device offers fast switching, low gate drive requirements, and high current ratings. Its careful design also ensures that it can handle temperatures of up to 124°C, guaranteeing long-term stability and reliability.

Conclusion

The IFS100V12PT4BOSA1 is an excellent and reliable choice for medium-to-high power systems. Its advanced features, such as its high switching frequencies and energy savings, make it an ideal option for a variety of applications, ranging from renewable energy systems to industrial automations. It also has the capacity to withstand temperatures of up to 124°C, and has been designed with the utmost care, making it a reliable and safe option for all types of power requirements.

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