Allicdata Part #: | IGW40N120H3FKSA1-ND |
Manufacturer Part#: |
IGW40N120H3FKSA1 |
Price: | $ 4.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 80A 483W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 80A 483W Through Hole... |
DataSheet: | IGW40N120H3FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.31550 |
10 +: | $ 3.89655 |
100 +: | $ 3.22591 |
500 +: | $ 2.80908 |
1000 +: | $ 2.44662 |
Power - Max: | 483W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 600V, 40A, 12 Ohm, 15V |
Td (on/off) @ 25°C: | 30ns/290ns |
Gate Charge: | 185nC |
Input Type: | Standard |
Switching Energy: | 3.16mJ |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 160A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGW40N120H3FKSA1 belongs to the Transistors - IGBTs - Single category. It is a current-controlled insulated gate bipolar transistor, or IGBT, that has been configured as a single device instead of in a module. It is used primarily in automotive, industrial, and consumer electronics applications.
The main applications of IGW40N120H3FKSA1 are motor control, power supply designs, AC-DC inverters, DC-DC converters, Class D audio amplifiers, HID lamp ballasts, electronic lighting systems, and reversing applications, among several others. This particular IGBT has an efficient gate drive, which makes it easy to use for people without extensive technical knowledge. Additionally, its speed makes it a great solution for high-frequency applications.
The working principle of IGW40N120H3FKSA1 relies on two main components: the collector-emitter junction, and the gate. The collector-emitter junction consists of the current-carrying electrode, the junction collector, and the opposite terminal, the emitter. It is responsible for providing the main conductive path between the gate and collector. When the junction is forward biased, a current flows from collector to emitter and the IGBT is in an “on” state. When the junction is reversed biased, the IGBT is in an “off” state.
The gate of an IGW40N120H3FKSA1 performs an important role in controlling the switching of the device. It is the control electrode that regulates the device’s current flow by controlling the alignment of the junction’s P-N layers. When the gate is connected to a positive voltage, it creates a “hole” in the p-type region that allows electrons to flow between the collector and emitter. When the gate is connected to a negative voltage, it creates a barrier which stops current flow.
Compared to bipolar junction transistors, IGW40N120H3FKSA1 is capable of handling higher voltages and currents, which makes it useful for powering high-power AC-to-DC and DC-to-DC converters, motor controls, and other such applications. Additionally, because IGW40N120H3FKSA1 has a fast recovery inherently, it can be used to switch high-frequency AC loads up to several hundred kHz.
Its high dv/dt immunity, fast switching, and robust nature make IGW40N120H3FKSA1 an ideal solution for automotive, industrial, and consumer electronics applications, such as motor speed control, AC-to-DC converters, and DC-to-DC power converters, among others. It is also highly resistant to overloads and short circuits and has a long lifetime, enabling it to be used in applications that require long-term reliability and performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IGW40N65H5AXKSA1 | Infineon Tec... | 2.98 $ | 1000 | IGBT 650V TO247-3IGBT Tre... |
IGW40N65F5AXKSA1 | Infineon Tec... | 2.98 $ | 1000 | IGBT 650V TO247-3IGBT Tre... |
IGW40T120FKSA1 | Infineon Tec... | 4.38 $ | 230 | IGBT 1200V 75A 270W TO247... |
IGW40N60TPXKSA1 | Infineon Tec... | 2.7 $ | 214 | IGBT 600V 67A TO247-3IGBT... |
IGW40N60H3FKSA1 | Infineon Tec... | 2.29 $ | 1000 | IGBT 600V 80A 306W TO247-... |
IGW40N65F5FKSA1 | Infineon Tec... | 2.2 $ | 87 | IGBT 650V 74A 255W PG-TO2... |
IGW40N120H3FKSA1 | Infineon Tec... | 4.75 $ | 1000 | IGBT 1200V 80A 483W TO247... |
IGW40N65H5FKSA1 | Infineon Tec... | 2.44 $ | 99 | IGBT 650V 74A 255W PG-TO2... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT