IGW40N65H5FKSA1 Discrete Semiconductor Products |
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Allicdata Part #: | IGW40N65H5FKSA1-ND |
Manufacturer Part#: |
IGW40N65H5FKSA1 |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 74A 255W PG-TO247-3 |
More Detail: | IGBT 650V 74A 255W Through Hole PG-TO247-3 |
DataSheet: | IGW40N65H5FKSA1 Datasheet/PDF |
Quantity: | 99 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.21760 |
10 +: | $ 1.99269 |
100 +: | $ 1.63290 |
500 +: | $ 1.39007 |
1000 +: | $ 1.17235 |
Power - Max: | 255W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 20A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | 22ns/165ns |
Gate Charge: | 95nC |
Input Type: | Standard |
Switching Energy: | 390µJ (on), 120µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 74A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IGW40N65H5FKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies AG, with zero reverse recovery charge, a low-inductive lossless or active clamping with a 99% clamping efficiency. It has a nominal Vces (collector-to-emitter voltage) of 650V and a maximum collector current of 40A. This device is suitable for various applications including voltage inverters, motor control, power converters, AC/DC supplies, dynamic braking, switches, and more.
Application Field
The IGW40N65H5FKSA1 is designed to be used in medium to high voltage application and provides a cost-effective solution for power switching applications. For example, it is used to control the speed of an electric motor in industrial applications. It can also be used in dynamic braking applications, where it can provide a comprehensive braking system for industrial and commercial machines. Additionally, it is well suited for high power DC/AC power converters and resonant converters, such as voltage inverters and uninterruptible power supplies (UPS). Its wide range of ratings and small package size make it an ideal choice for inverter applications.
Working Principle
The IGW40N65H5FKSA1 employs a novel technology which is based on both MOSFET and bipolar transistors. It combines the advantages of both to cut down the conduction losses and switching losses by a considerable amount. When the gate is open, it allows the current to flow through the device. When the gate is closed, the current is blocked. The device is then said to be in a forward blocking phase. When the gate voltage is reversed, the current flow is blocked and the device is in the reverse blocking phase.
The device also features a collector-emitter breakdown voltage and a high maximum collector current rating. It is also capable of providing a high AC voltage rating, making it a suitable choice for high power applications. It is also capable of providing a very low input capacitance and a low on-state voltage drop. It is also protected from overvoltage, thermal runaway and over-temperature.
Overall, for high power applications which require efficient switching, the IGW40N65H5FKSA1 is the ideal choice. With its wide range of ratings, small package size and built-in features, it provides an optimal solution for all power switching related applications.
The specific data is subject to PDF, and the above content is for reference
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