IGW40N65H5FKSA1 Allicdata Electronics

IGW40N65H5FKSA1 Discrete Semiconductor Products

Allicdata Part #:

IGW40N65H5FKSA1-ND

Manufacturer Part#:

IGW40N65H5FKSA1

Price: $ 2.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V 74A 255W PG-TO247-3
More Detail: IGBT 650V 74A 255W Through Hole PG-TO247-3
DataSheet: IGW40N65H5FKSA1 datasheetIGW40N65H5FKSA1 Datasheet/PDF
Quantity: 99
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.21760
10 +: $ 1.99269
100 +: $ 1.63290
500 +: $ 1.39007
1000 +: $ 1.17235
Stock 99Can Ship Immediately
$ 2.44
Specifications
Power - Max: 255W
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 400V, 20A, 15 Ohm, 15V
Td (on/off) @ 25°C: 22ns/165ns
Gate Charge: 95nC
Input Type: Standard
Switching Energy: 390µJ (on), 120µJ (off)
Series: TrenchStop®
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 74A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IGW40N65H5FKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies AG, with zero reverse recovery charge, a low-inductive lossless or active clamping with a 99% clamping efficiency. It has a nominal Vces (collector-to-emitter voltage) of 650V and a maximum collector current of 40A. This device is suitable for various applications including voltage inverters, motor control, power converters, AC/DC supplies, dynamic braking, switches, and more.

Application Field

The IGW40N65H5FKSA1 is designed to be used in medium to high voltage application and provides a cost-effective solution for power switching applications. For example, it is used to control the speed of an electric motor in industrial applications. It can also be used in dynamic braking applications, where it can provide a comprehensive braking system for industrial and commercial machines. Additionally, it is well suited for high power DC/AC power converters and resonant converters, such as voltage inverters and uninterruptible power supplies (UPS). Its wide range of ratings and small package size make it an ideal choice for inverter applications.

Working Principle

The IGW40N65H5FKSA1 employs a novel technology which is based on both MOSFET and bipolar transistors. It combines the advantages of both to cut down the conduction losses and switching losses by a considerable amount. When the gate is open, it allows the current to flow through the device. When the gate is closed, the current is blocked. The device is then said to be in a forward blocking phase. When the gate voltage is reversed, the current flow is blocked and the device is in the reverse blocking phase.

The device also features a collector-emitter breakdown voltage and a high maximum collector current rating. It is also capable of providing a high AC voltage rating, making it a suitable choice for high power applications. It is also capable of providing a very low input capacitance and a low on-state voltage drop. It is also protected from overvoltage, thermal runaway and over-temperature.

Overall, for high power applications which require efficient switching, the IGW40N65H5FKSA1 is the ideal choice. With its wide range of ratings, small package size and built-in features, it provides an optimal solution for all power switching related applications.

The specific data is subject to PDF, and the above content is for reference

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