IGW40N60TPXKSA1 Allicdata Electronics
Allicdata Part #:

IGW40N60TPXKSA1-ND

Manufacturer Part#:

IGW40N60TPXKSA1

Price: $ 2.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 67A TO247-3
More Detail: IGBT Trench Field Stop 600V 67A 246W Through Hole ...
DataSheet: IGW40N60TPXKSA1 datasheetIGW40N60TPXKSA1 Datasheet/PDF
Quantity: 214
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.45070
10 +: $ 2.20122
100 +: $ 1.80356
500 +: $ 1.53535
1000 +: $ 1.29487
Stock 214Can Ship Immediately
$ 2.7
Specifications
Series: TrenchStop™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 67A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Power - Max: 246W
Switching Energy: 1.06mJ (on), 610µJ (off)
Input Type: Standard
Gate Charge: 177nC
Td (on/off) @ 25°C: 18ns/222ns
Test Condition: 400V, 40A, 10.1 Ohm, 15V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IGW40N60TPXKSA1 is a single insulated gate bipolar transistor (IGBT) module designed for the most demanding industrial and commercial applications. This particular IGBT module is known for its outstanding thermal performance and high reliability. The IGW40N60TPXKSA1 has a maximum current rating of 40A and a maximum voltage rating of 600V. The design also includes an avalanche current protection device, a shape factor of 2.1, a reverse voltage protection device, and an integrated temperature estimation system.

The IGW40N60TPXKSA1 is designed to be used in a variety of industrial and commercial applications such as UPS, HVAC, electrical motor, and other high-power applications. This IGBT module is ideal for applications that require efficiency, power density, and reliable operation in a short period of time. This IGBT module is also suitable for use in applications such as high-frequency switching, controlled rectification, and battery charging.

The working principle of the IGW40N60TPXKSA1 module is based on the insulated gate bipolar transistor (IGBT) technology. IGBTs are essentially a combination of a conventional bipolar transistor and a field-effect transistor (FET). In an IGBT, the current flow is controlled by two separate channels: one between the emitter and the base and another between the collector and the base. When a voltage is applied to the gate, it will create an electric field which will cause a force to push electrons from the gate to the emitter and collector. As a result, electron current will flow from the emitter to the collector, thereby switching on the IGBT.

The IGW40N60TPXKSA1 module has several features that make it suitable for industrial and commercial applications. These features include a rated current of 40A, a high-frequency switching capability, an avalanche current protection device, a shape factor of 2.1, a reverse voltage protection device, and an integrated temperature estimation system. Additionally, this IGBT module is designed for low losses and low power consumption, making it an ideal choice for demanding industrial and commercial applications.

In conclusion, the IGW40N60TPXKSA1 module is an excellent choice for industrial and commercial applications that require efficiency, power density, and reliable operation in a short period of time. The working principle of this module is based on the insulated gate bipolar transistor technology, which utilizes two separate channels to control current flow. It is also designed with several features for low losses and low power consumption. This makes it a great choice for applications such as UPS, HVAC, electrical motor, and other high-power applications.

The specific data is subject to PDF, and the above content is for reference

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