IGW50N60H3FKSA1

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The IGW50N60H3FKSA1 transistor is rated for a maximum drain-source voltage of 600 V, a maximum drain current of 60 A, and a maximum junction temperature of 150°C. It is part of a range of insulated gate bipolar transistors (IGBTs) grades with both short-circuit hardening and avalanche immunity.

The IGW50N60H3FKSA1 is designed to minimize losses in most hard and soft switching applications, as well as in power converters, such as DC/DC converter, DC/AC inverter, AC/DC rectifier and AC/AC chopper. This transistor is also suitable for lighting, home appliances, motor control and motor drive applications, such as engine management circuit, traction control, uninterruptible power supply, welding, air conditioning and blender control.

Working Principle

The IGW50N60H3FKSA1 transistor combines the benefits of both MOSFETs and bipolar transistors. It uses a combination of positive and negative charges under the gate terminal to control the flow of current through the source and drain. The function of the gate terminal is to modulate the current by adjusting the voltage. The IGW50N60H3FKSA1 is able to switch on much faster than a bipolar transistor and also has higher current and power handling capability.

This device features all the necessary protection mechanisms, such as temperature, current and voltage protection, which protect the device from over-current, over-voltage, short-circuit, reverse-polarity and over temperature conditions. The IGW50N60H3FKSA1uses a specially designed glass passivated dielectric which isolates the silicon chip from the environment, and provides better protection against transient spikes and surges.

In addition, this device also features a built-in-short-circuit protection which prevents a high current from flowing in an undesired direction, thereby providing added protection from thermal damage. The IGW50N60H3FKSA1 also has an integrated gate Emitter leakage diode and a gate Emitter voltage clamped diode for over-voltage protection.

The IGW50N60H3FKSA1 is a high performance IGBT capable of handling higher power and current in comparison to other competitive devices. Its superior performance comes from its high current capacity, high switching frequency, fast turn-on and turn-off times, and its ability to handle high frequency and power over longer periods of time. The IGW50N60H3FKSA1 is well suited for a wide range of applications such as variable speed motor drive and uninterruptible power supply (UPS).

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