IGW50N60TPXKSA1 Discrete Semiconductor Products

Series:	TrenchStop™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	150A
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 50A
Power - Max:	319.2W
Switching Energy:	1.53mJ (on), 850µJ (off)
Input Type:	Standard
Gate Charge:	249nC
Td (on/off) @ 25°C:	20ns/215ns
Test Condition:	400V, 50A, 7 Ohm, 15V
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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Introduction

The IGW50N60TPXKSA1 is a ultra-fast IGBT (Insulated Gate Bipolar Transistor) designed for high-voltage power applications. It is designed to operate effectively in high-current, high-speed switching conditions and features a wide range of features and options for providing the precise control you need for your application. This article will take a close look at the IGW50N60TPXKSA1 application field and working principle.

Application Field

The IGW50N60TPXKSA1 is primarily designed for power management in high-voltage applications, such as industrial motor control, DC-AC inverters, UPS systems, and home appliances. The IGW50N60TPXKSA1\'s high-voltage and fast switching capabilities make it an ideal choice for applications requiring accurate, high-quality power conversion and control. The IGW50N60TPXKSA1 is an ultra-fast IGBT, up to 4-times faster than standard IGBTs, allowing for high-frequency switching to reduce the size and weight of the system. It is also designed to provide superior thermal performance and improved noise immunity and reliability.

Working Principle

The IGW50N60TPXKSA1 is a power MOSFET-style device. This type of device uses a metal oxide film to form an insulated gate between the source (S) and drain (D) terminals. This insulated gate is used to control the current flow between the source and drain, by applying a voltage to the gate (Vg). This gate voltage (Vg) can be used to transfer high-currents between the source and drain. The IGW50N60TPXKSA1 can also be used in a voltage-controlled mode, allowing for precise voltage control to help achieve efficient power conversion and improved system performance.

Conclusion

The IGW50N60TPXKSA1 is an ultra-fast IGBT designed for high-voltage power applications. It offers superior thermal performance and improved noise immunity and reliability. The IGW50N60TPXKSA1 is ideal for motor control, DC-AC inverters, UPS systems, and home appliances. Its high-voltage and fast switching capability enables precise control for power conversion, making it a great choice for high-power applications.

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