Allicdata Part #: | IGW50N65H5FKSA1-ND |
Manufacturer Part#: |
IGW50N65H5FKSA1 |
Price: | $ 2.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 80A 305W PG-TO247-3 |
More Detail: | IGBT 650V 80A 305W Through Hole PG-TO247-3 |
DataSheet: | IGW50N65H5FKSA1 Datasheet/PDF |
Quantity: | 161 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.38770 |
10 +: | $ 2.14200 |
100 +: | $ 1.75480 |
500 +: | $ 1.49384 |
1000 +: | $ 1.25987 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Power - Max: | 305W |
Switching Energy: | 520µJ (on), 180µJ (off) |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 21ns/180ns |
Test Condition: | 400V, 25A, 12 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
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The IGW50N65H5FKSA1 is part of the range of IGBT modules from Infineon Technologies. It is a single-walled insulated gate field-effect transistor (IGFET) module. Also known as an insulated-Gate Bipolar Transistor (IGBT), this is a power semiconductor device that combines the advantages of a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor). The IGW50N65H5FKSA1 module offers high power and high voltage blocking capability with low on-state resistance, making it suitable for a range of applications in the automotive, industrial, and consumer electronics sectors.
The IGW50N65H5FKSA1’s low on-state resistance makes it ideal for power supplies and motor drives. It can also be used in ac/dc and dc/dc converters, as well as in LED lighting applications. The module is typically installed in a motor control system for controlling the motor speed and torque. It is also suitable for applications such as home appliances, photocopiers, and white goods.
The IGW50N65H5FKSA1 has a voltage range between 600V and 1000V and a power range of up to 1,200 W. It features an improved current balance for energy efficiency and enhanced cooling performance. Its fast switching capability enables smooth operation, with a turn-on time of less than 1µs and a turn-off time of less than 2µs. It has a low thermal resistance and is designed to operate without a temperature sinking plate or heat sink.
The IGW50N65H5FKSA1 module works by using an N-channel IGFET, which consists of a gate, and a drain and a source terminal. The gate is used to control an electric field within the device that modulates the conductivity between the drain and the source. When the gate is activated, the electric field is created and current flows from the source to the drain, causing the transistor to turn on. When the gate is not activated, the electric field is dissipated and the transistor turns off. The gate voltage level is used to control the current of the transistor.
The IGW50N65H5FKSA1 provides a reliable, cost-effective solution for applications needing high-voltage blocking capability, low on-state resistance, and fast switching capability. It is particularly well-suited for industrial and automotive applications where power supplies, motor control systems, and LED lighting are used. Its low on-state resistance reduces energy losses, making it an energy-efficient solution.
The specific data is subject to PDF, and the above content is for reference
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