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IGW50N65F5AXKSA1 Application Field and Working Principle

Introduction

IGW50N65F5AXKSA1 is an insulated gate bipolar transistor (IGBT) developed by TAMURA. It is part of TAMURA’s IGBT series and is classified under transistors and IGBTs. The device is through-hole type, with a Vceo of 650V, a gate threshold voltage of 4V, a gate current of 26A, a collector current of 12-5A and a collector-emitter saturation voltage of 3.5V.

application field

This device can be used in various applications such as AC and DC motor drives, solenoid coils, UPS systems, and DC/DC converters.

It can be used in any application that requires high power, low losses and high efficiency. In particular it is suitable for applications with switching frequencies of 500kHz or more.

Working Principle

An IGW50N65F5AXKSA1 transistor is composed of two parts: an N-channel MOSFET and a P-channel MOSFET. When the transistor is off, the gate-collector voltage of the IGW50N65F5AXKSA1 transistor is at 0V and no current flows. When the gate-collector voltage is increased, the transistor turns on and allow current to flow from the collector to the emitter.

The IGW50N65F5AXKSA1 is a “low-on-voltage” type IGBT and has a gate-emitter threshold voltage of 4V, meaning a gate voltage of at least 4V is required to turn the IGW50N65F5AXKSA1 on. The collector-emitter voltage of the IGW50N65F5AXKSA1 is 650V, meaning the voltage across the collector and emitter can be up to 650V.

Conclusion

The IGW50N65F5AXKSA1 is an IGBT transistor that is suitable for applications such as AC and DC motor drives, solenoid coils, UPS systems, and DC/DC converters. It is a low-on-voltage type with a gate-emitter threshold voltage of 4V and a collector-emitter voltage of 650V. It has a gate current of 26A max and a collector current of 12-5 A max.

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