Allicdata Part #: | IKW50N60TAFKSA1-ND |
Manufacturer Part#: |
IKW50N60TAFKSA1 |
Price: | $ 5.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 600V 80A 333W TO247-3 |
More Detail: | IGBT Trench Field Stop 600V 80A 333W Through Hole ... |
DataSheet: | IKW50N60TAFKSA1 Datasheet/PDF |
Quantity: | 232 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.77540 |
10 +: | $ 4.31298 |
100 +: | $ 3.57078 |
Series: | TrenchStop® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 150A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 50A |
Power - Max: | 333W |
Switching Energy: | 2.6mJ |
Input Type: | Standard |
Gate Charge: | 310nC |
Td (on/off) @ 25°C: | 26ns/299ns |
Test Condition: | 400V, 50A, 7 Ohm, 15V |
Reverse Recovery Time (trr): | 143ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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The IKW50N60TAFKSA1 is a type of insulated-gate bipolar transistor (IGBT) assembled with a single anti-parallel fast recovery diode. Both the IGBT and the fast recovery diode are rated for a maximum voltage of 600V and a maximum current of 50A. The IKW50N60TAFKSA1 is a popular choice for applications that require medium to high power. It is used in higher power motor controls, welding machines, server power supplies, and snubber circuits.
Application Fields
The IKW50N60TAFKSA1 is designed for medium to high power applications in motor control, welding, snubber, and power supply. Within motor control applications, IKW50N60TAFKSA1 is used for high performance, large SCR drives, reversible pulse drive inverters, three-phase AC inverters, DC-AC switching power supplies, and adjustable speed drives. In welding applications, it is used in medium to high frequency inverters, welding machines, and welding rectifiers. It is also used in snubber circuits for absorption of high speed current commutations. In power supply applications, IKW50N60TAFKSA1 is used for power conversion to high performance, high efficiency switch mode power supplies such as server power supplies, chargers, and renewable energy.
Working Principle
The IKW50N60TAFKSA1 utilizes the principle of bipolar junction transistors (BJTs). It consists of two PN junctions formed by the connection of three active layers. An n-type layer sits between two p-type layers. When a current source is applied to the n-layer, current will flow across the PN junctions and through the device. This causes a voltage drop between the two P-layers, resulting in an output voltage. The IKW50N60TAFKSA1 is advantageous over traditional BJT devices because it has higher current carrying capacity and efficiency, and much lower switching losses.
In addition, the IKW50N60TAFKSA1 has an integrated fast recovery diode which helps to reduce switching and circulating losses associated with the operation of the device. The fast recovery diode also helps to reduce thermal stress during rapid current changes and helps to reduce EMI. This reduces the total power losses and increases the device’s reliability.
The IKW50N60TAFKSA1 is a reliable and efficient choice for medium to high power applications. It is easy to use, features an integrated diode, and offers very-low switching losses and high current carrying capacity. It has been designed to meet the demanding requirements of applications such as motor control, welding, snubber, and power supply applications.
The specific data is subject to PDF, and the above content is for reference
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