Allicdata Part #: | IKW50N65H5FKSA1-ND |
Manufacturer Part#: |
IKW50N65H5FKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 650V 80A 305W PG-TO247-3 |
More Detail: | IGBT 650V 80A 305W Through Hole PG-TO247-3 |
DataSheet: | IKW50N65H5FKSA1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 305W |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 57ns |
Test Condition: | 400V, 25A, 12 Ohm, 15V |
Td (on/off) @ 25°C: | 21ns/180ns |
Gate Charge: | 120nC |
Input Type: | Standard |
Switching Energy: | 520µJ (on), 180µJ (off) |
Series: | TrenchStop® |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 150A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The IKW50N65H5FKSA1 is a superjunction IGBT, also known as a Metal Oxide semiconductor Field Effect Transistors (MOSFETs). It is categorized as a single IGBT. The IKW50N65H5FKSA1 is a medium power device with a rated collector current of 75 A and a breakdown voltage of 500V. It requires a gate-source voltage of 10V and is suitable for operation at frequencies up to 3MHz.The main benefit of the IKW50N65H5FKSA1 is its low on-resistance and low switching losses. This makes it well suited for applications that require high efficiency, such as motor control and power conversion. The low on-resistance also reduces power dissipation, which reduces the need for cooling and makes the IKW50N65H5FKSA1 ideal for high-temperature environments.The IKW50N65H5FKSA1 is typically used in switched mode power supplies, AC and DC-to-DC power converters, motor drivers, UPS systems, and other power control applications. It is also suitable for DC-AC inverter applications that require high reliability and efficiency.The IKW50N65H5FKSA1 utilizes a superjunction structure, which provides a wide operating range and linear conduction behavior. This allows for more precise control of the load current, resulting in precise turning on and off at required current levels with minimal switching losses. The switching frequency of the IKW50N65H5FKSA1 can be up to 3 MHz, allowing for more complex efforts in applications.The IKW50N65H5FKSA1 is capable of commutation of high voltages and high-frequency operation in a small overall footprint. This is achieved by using a trench gate structure and by offering a compact layout. The use of these advanced technologies allows higher efficiency in operation and reduces switching losses.The IKW50N65H5FKSA1 is also capable of reducing EMI levels thanks to its extremely low gate capacitance. This allows the use of the device in sensitive applications where EMI is a major concern.In conclusion, the IKW50N65H5FKSA1 is a versatile IGBT device that offers low switching losses and low EMI levels. It is suitable for applications that require high efficiency, such as motor control and power conversion. It is also well-suited for DC-AC inverter applications and has a wide operating range and linear conduction behavior. Its small size and ability to operate at high voltages and frequencies make it ideal for various device applications.
The specific data is subject to PDF, and the above content is for reference
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