IKW50N65F5AXKSA1

Series:	Automotive, AEC-Q101, TrenchStop™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Not For New Designs
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	150A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 50A
Power - Max:	270W
Switching Energy:	490µJ (on), 140µJ (off)
Input Type:	Standard
Gate Charge:	108nC
Td (on/off) @ 25°C:	21ns/156ns
Test Condition:	400V, 25A, 12 Ohm, 15V
Reverse Recovery Time (trr):	77ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3

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Introduction

The IKW50N65F5AXKSA1 from Infineon Technologies is an insulated gate bipolar transistor (IGBT) based on a highly reliable trench-gate structure that offers excellent performance and capability for high frequencies, high power applications. It is a high current, single-channel IGBT that provides efficient, reliable, and continuous operation. Additionally, its integrated protection circuitry for over-temperature and over-current helps ensure system reliability and safe operation.

Application Field

The IKW50N65F5AXKSA1 IGBT is a single-channel device that is commonly used in motor control, power conversion, and variable speed applications. As a high-power device, it can be used in applications such as uninterruptible power supplies (UPS), variable frequency drives (VFD), switch mode power supply (SMPS), fiber lasers, capacitive discharge ignition (CDI) systems, and home appliances.

Working Principle

The IKW50N65F5AXKSA1 IGBT is a switching transistor that utilizes the bipolar junction mechanism. It combines the best attributes of both the BJT and the MOSFET technologies, allowing it to deliver high-speed switching performance with low on-state losses. The IGBT has an insulated gate that is insulated from the body. This insulation layer allows the voltage applied to the gate to remain constant and can be used to control the current in the device.When a positive voltage is applied to the gate, electrons accumulate on the gate, reducing the depletion zone width and increasing the channel’s conductivity. As a result, the electrical current can flow, resulting in an ON-state. In the OFF-state, no gate voltage is applied, and the depletion zone width is maintained, resulting in a low electrical conduction between source and drain.

Advantages

The IKW50N65F5AXKSA1 IGBT offers numerous advantages over conventional technologies, including:

• High current density – allowing for improved power density
• High-speed switching – lower on-state switching delays
• Low switching losses – resulting in improved efficiency
• Low output capacitance – reducing switching losses
• High input impedance – ensuring robust operation
• Low gate charge – reducing gate drive losses
• Integrated protection circuitry – helping ensure system reliability and safe operation

Additionally, IGBTs are simple to control, offer superior thermal performance, require minimal external components, and are available in a wide range of packages for a variety of applications.

Conclusion

The IKW50N65F5AXKSA1 IGBT from Infineon Technologies is a single-channel device designed specifically for high-power applications. With its integrated protection circuitry, it provides reliable and safe operation while delivering high current density and high-speed switching performance with low on-state losses. These advantages, combined with its low output capacitance and gate charge, make it an ideal solution for variable speed applications, switch mode power supplies, and other high-current requirements.

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