IMD23T108 Allicdata Electronics
Allicdata Part #:

IMD23T108-ND

Manufacturer Part#:

IMD23T108

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN/PNP 50V SC74
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: IMD23T108 datasheetIMD23T108 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07313
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms, 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms, 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500µA
Current - Collector Cutoff (Max): --
Frequency - Transition: 200MHz, 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6
Description

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IMD23T108 Application Field and Working Principle

The IMD23T108 pre-biased array from Infineon is a versatile and versatile device. It features a dual-gate type output buffer and four pre-biased outputs that enable a wide range of applications including motor control, switch mode power supplies (SMPS), and logic level switching. The device is ideal for applications where the need for optimal efficiency, reliability and power density is critical.

Features

The IMD23T108 features a wide variety of features that make it a great solution for various applications. It features a low forward voltage drop, a low offset current and a high power drive capability. In addition, the device also has a wide operating temperature range and a fast turn-off time. It is also highly reliable with a maximum junction temperature of 150°C.

Application Fields

The IMD23T108 is well suited for a wide range of applications. These include motor controllers, switch mode power supplies, logic level switch and high power switching. It can also be used in other applications such as power electronics, audio amplifiers and junction power supply. Additionally, it is suitable for auto and non-auto applications.

Working Principles

The working principle of the IMD23T108 is based on two-gate transistor technology. The device is designed to create two complementary Phase-Shifted signals which can be used as a high-power switching switch or logic level switch. The first gate is designed to create a pre-bias voltage, while the second gate is used to regulate the overall output voltage. The two gates will act together to provide a power supply switch with high efficiency, precision and reliability.

Conclusion

The IMD23T108 from Infineon is a highly versatile pre-biased array device that is suitable for a wide range of applications. It features low forward voltage drop, low offset current and high power drive capability. Additionally, it has a wide operating temperature range and a fast turn-off time. The device offers high reliability and features an efficient, precise and reliable power switch operation. It is ideal for applications such as motor controllers, switch mode power supplies, logic level switch and high power switching.

The specific data is subject to PDF, and the above content is for reference

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