| Allicdata Part #: | IMD23T108-ND |
| Manufacturer Part#: |
IMD23T108 |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PREBIAS NPN/PNP 50V SC74 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
| DataSheet: | IMD23T108 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.07313 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max): | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 1 kOhms, 10 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms, 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 50mA, 5V, 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 50mA, 2.5mA, 300mV @ 10mA, 500µA |
| Current - Collector Cutoff (Max): | -- |
| Frequency - Transition: | 200MHz, 250MHz |
| Power - Max: | 300mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-74, SOT-457 |
| Supplier Device Package: | SMT6 |
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IMD23T108 Application Field and Working Principle
The IMD23T108 pre-biased array from Infineon is a versatile and versatile device. It features a dual-gate type output buffer and four pre-biased outputs that enable a wide range of applications including motor control, switch mode power supplies (SMPS), and logic level switching. The device is ideal for applications where the need for optimal efficiency, reliability and power density is critical.
Features
The IMD23T108 features a wide variety of features that make it a great solution for various applications. It features a low forward voltage drop, a low offset current and a high power drive capability. In addition, the device also has a wide operating temperature range and a fast turn-off time. It is also highly reliable with a maximum junction temperature of 150°C.
Application Fields
The IMD23T108 is well suited for a wide range of applications. These include motor controllers, switch mode power supplies, logic level switch and high power switching. It can also be used in other applications such as power electronics, audio amplifiers and junction power supply. Additionally, it is suitable for auto and non-auto applications.
Working Principles
The working principle of the IMD23T108 is based on two-gate transistor technology. The device is designed to create two complementary Phase-Shifted signals which can be used as a high-power switching switch or logic level switch. The first gate is designed to create a pre-bias voltage, while the second gate is used to regulate the overall output voltage. The two gates will act together to provide a power supply switch with high efficiency, precision and reliability.
Conclusion
The IMD23T108 from Infineon is a highly versatile pre-biased array device that is suitable for a wide range of applications. It features low forward voltage drop, low offset current and high power drive capability. Additionally, it has a wide operating temperature range and a fast turn-off time. The device offers high reliability and features an efficient, precise and reliable power switch operation. It is ideal for applications such as motor controllers, switch mode power supplies, logic level switch and high power switching.
The specific data is subject to PDF, and the above content is for reference
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IMD23T108 Datasheet/PDF