IMD2AT108 Allicdata Electronics

IMD2AT108 Discrete Semiconductor Products

Allicdata Part #:

IMD2AT108TR-ND

Manufacturer Part#:

IMD2AT108

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN/PNP PREBIAS 0.3W SMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: IMD2AT108 datasheetIMD2AT108 Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Base Part Number: *MD2
Supplier Device Package: SMT6
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A Pre-Biased Arrays Transistor, such as the IMD2AT108, is an essential component in a range of electrical/electronic applications and is used to amplify or switch a current or voltage signals. It works by either controlling the current flow that is or providing gain in the signal source. This makes them a versatile and reliable component in the modern day board designs. The IMD2AT108 is a multi-output array transistor pre-biased to a 2.0V voltage output. This allows the user to interface with a range of devices and operating systems, with flexibility in selection of the appropriate bias voltage.

The IMD2AT108 works on the bi-polar junction transistor (BJT) principle. This type of transistor is created by sandwiching a base layer of n-type semiconductor material between two p-type layers. This creates what is known as the “base” of the transistor structure. Electrons from the n-type become “minority carriers” and move around the junction area creating a “space charge region” . This allows current to flow through the transistor junction and a current gain is achieved.

The IMD2AT108 operates in the sub-threshold region, where the base current is much lower than the emitter current. This allows a very low power supply voltage, making it ideal for low-power applications. The pre-biased nature of the device eliminates the need for extra external circuitry, making it easy to install and adjust. It\'s relatively small size, low-power requirements, and high current efficiency make it a great choice for designers looking for a cost-effective solution for their electrical/electronic circuit designs.

In operation, the IMD2AT108 is designed to be used in the common emitter configuration. This allows the user to bias the output voltage without the need for an external bias voltage. By varying the size of the base layer, the device can be easily adjusted to supply either higher or lower voltages. The output signal is cascaded through multiple levels of transistors to allow the current gain to increase with each level, allowing the signal voltage to increase in proportion. In addition, pre-biasing the device ensures that the correct amount of current is available to the device, thus achieving the correct voltage gain.

The IMD2AT108 pre-biased array transistor is a great choice for those looking for a simple, cost-effective transistor solution for their design needs. Its wide range of applications and small size make it an ideal solution for a variety of circuit designs. As the design parameters are extremely simple and adjustable, it is also possible to fine-tune the device for specific applications. Its pre-bias nature eliminates the need for external circuitry and ensures that the device is ready to use straight out of the package. The IMD2AT108 is a great choice for those looking for a simple, cost-effective transistor solution.

The specific data is subject to PDF, and the above content is for reference

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