IMT17T110 Allicdata Electronics
Allicdata Part #:

IMT17T110TR-ND

Manufacturer Part#:

IMT17T110

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP 50V 0.5A 6SMT
More Detail: Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 50...
DataSheet: IMT17T110 datasheetIMT17T110 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Power - Max: 300mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6
Base Part Number: MT17
Description

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The IMT17T110 is a thyristor array designed to protect equipment, components and systems from transient over-current phenomena such as lightning and induced surges. Its purpose is to limit the peak and total current that could be experienced by any component in the circuit. It has many application fields and its working principle is often misunderstood.

The IMT17T110 is typically used to protect vulnerable components and systems. It has a number of application fields where its low current capability, high surge protection and broad range of operating voltages make it ideal for use. These include automotive applications, industrial and power systems, medical equipment, communication systems and networks, data storage and transmission, as well as civil and military avionics. Additionally, thyristor arrays are often used in power distribution, high power amplifiers and power supplies.

Now we can dig into the working principle of the Advanced Thyristor Arrays. In its normal state, the gate terminals of thyristor array are held at ground potential, completely switching off the array. When the gate terminal receives a trigger current, the array is activated. The trigger current is then divided among the group of thyristors and each individual thyristor is stimulated to start conducting current. The thyristors then switch on conditionally and remain this way as long as the gate current is applied.

A major component of the IMT17T110 is its over-current protection mechanism. This uses a voltage sensing circuit that responds to the rise in current in its load. When the current exceeds the pre-set threshold the protection circuit trips, cutting off the applied gate current and switching off the thyristors, thus limiting the peak and total current. This trip can also be adjusted via an external resistor or potentiometer, allowing users to finely tune the reactivity of the circuit.

The IMT17T110 is an ideal choice for a range of applications due to its low current capability and adjustable over-current protection. Its small size and rugged construction also make it highly versatile and dependable in demanding situations. As a direct result of its high current protection, the IMT17T110 is used in many different industries, ranging from automotive and home automation to industrial, military and power supply.

The specific data is subject to PDF, and the above content is for reference

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