Allicdata Part #: | IMT1AT108TR-ND |
Manufacturer Part#: |
IMT1AT108 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2PNP 50V 0.15A 6SMT |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 15... |
DataSheet: | IMT1AT108 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
Base Part Number: | *MT1 |
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IMT1AT108 is a type of Bipolar Junction Transistor (BJT) Array that offers four low-noise transistors in a single package. It is suitable for use in different types of applications, ranging from pre-amplification to power amplification and from instrumentation to radio frequency stages. The IMT1AT108 has several advantages, which make it ideal for many applications.
The main feature of the IMT1AT108 is that it incorporates four individual Bipolar Junction Transistors (BJT) in a single package. This allows the device to be integrated into a single circuit, increasing its functionality. This can reduce manufacturing costs, since the number of components required is reduced.
The IMT1AT108 also features a low-noise design, which enables it to operate in noise-critical applications. Its low-noise characteristics are especially beneficial in radio-frequency stages, where noise is an important factor. The IMT1AT108 also has high input resistance (100K), allowing it to perform its job with minimum interference from other components in the circuit.
The IMT1AT108 has a wide range of applications. It is used in pre-amplifiers, amplifiers, instrumentation, and radio-frequency stages. It can also be used in mixing applications, where its low-noise characteristic can be exploited. It can also be used in power amplifying applications, where its high input resistance can be taken advantage of.
The working principle of the IMT1AT108 is based on input and output relationships. The input and output signals are fed into the four BJTs (each connected to a separate input terminal) and amplified accordingly. The amplifier output is controlled by the collector current, which is proportional to the current gain of the device. The transistor array is designed to provide high input resistance and low output impedance, which ensures that the signal is amplified and transferred with minimum distortions.
The IMT1AT108 can be used with a variety of circuit configurations and is capable of providing excellent performance in a wide range of applications. It is suitable for use in pre-amplification, radio frequency stages, instrumentation, and power amplification. Its low noise characteristic makes it an ideal choice for many applications, such as radio receivers and sound studios. Its high input resistance makes it suitable for use in mixing applications, where its low-noise characteristics can be exploited.
The IMT1AT108 is an ideal choice for many applications, due to its wide range of applications, low noise, and high input resistance. Its wide range of applications makes it suitable for use in pre-amplification, instrumentation, radio frequency stages, and power amplification. Its low-noise characteristic makes it ideal for use in radio receivers and sound studios. Its high input resistance makes it suitable for use in mixing applications.
The specific data is subject to PDF, and the above content is for reference
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