Allicdata Part #: | IMT1AT110TR-ND |
Manufacturer Part#: |
IMT1AT110 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2PNP 50V 0.15A 6SMT |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 15... |
DataSheet: | IMT1AT110 Datasheet/PDF |
Quantity: | 27000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SMT6 |
Base Part Number: | *MT1 |
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The IMT1AT110 is a single IGBT array module composed of three discrete insulated gate bipolar transistors (IGBTs). This type of transistor array is commonly referred to as a “triple-pack” or “three-in-one” configuration. The IMT1AT110 is designed to provide a reliable and efficient solution for applications requiring high-current and/or high-voltage operation.
The IMT1AT110 has wide applications in many industries. For example, it can be used in power supplies, motor drives, welders, electric vehicles and other large-scale power equipment. It can also be used in solar array systems, power conversion systems and other applications requiring high power switching.
The IMT1AT110 is a three-terminal active device, consisting of three IGBTs connected in a series array. Each of the IGBTs has its own gate, emitter, and collector terminals. The IGBTs are specially designed to handle high current and voltage, making the module suitable for high-power applications.
The IMT1AT110 has a built-in gate-drive IC that provides the required gate voltage and current to turn on the IGBTs. The module also features a soft-turn-on circuit that helps reduce inrush current when switching on. The electrical and thermal properties of the module are designed to minimize audible noise and EMI emissions.
The basic operating principles of the IMT1AT110 are simple. When the gate voltage is applied to the IGBTs, an electrical current is created between the collector and the emitter of each device in the array. This current then flows through the channel of the IGBT and switches the device on. The magnitude of the current is controlled by the applied gate voltage and the characteristics of the device.
The IMT1AT110 is an efficient and reliable transistor array module, ideal for any application requiring high power switching and voltage/current handling capabilities. The built-in gate-drive IC and soft-turn-on circuit help to maximize efficiency and reliability, making the module a great choice for many power conversion and distribution systems.
The specific data is subject to PDF, and the above content is for reference
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