Allicdata Part #: | IRD3CH5BD6-ND |
Manufacturer Part#: |
IRD3CH5BD6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | DIODE CHIP EMITTER CONTROLLED |
More Detail: | Diode |
DataSheet: | IRD3CH5BD6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Diodes - Rectifiers - Single
IRD3CH5BD6 is a single diode, rectifier with a zero reverse recovery time, making it an efficient option for a wide range of applications. It offers excellent forward voltage and current characteristics even under extreme operating conditions. This makes it perfect for hot-swap and voltage spike protection in power electronic design. Additionally, its zero reverse recovery time allows increased operations and improved power efficiency.
Application Field
IRD3CH5BD6 is well suited for a number of applications such as those in automotive, aeroplane, and power conversion systems. It can handle high surge currents, peak reverse voltages and high transient thermal stresses. This makes it an ideal option for automotive automotive applications such as starting and charging systems. Additionally, it is suitable for applications involving frequency converters, power modules and home appliance as well as solar panels and wind turbines.
Working Principle
IRD3CH5BD6 shares the same basic principle as other single diodes like the typical 1N4148. In a forward bias condition, it allows the current to flow from the anode to the cathode. In a reverse bias condition, it inhibits the current from going from the cathode back to the anode. The zener voltage ensures that when the diode is reversed biased, the voltage across it stays above a certain threshold. When this voltage is exceeded, the diode turns on and conducts current in a reverse direction, preventing a voltage spike.
Advantages
The key advantages of IRD3CH5BD6 are the zero reverse recovery time and its ability to withstand large current surges while still providing excellent performance. This allows it to provide superior level of hot-swap protection. It also has a wide operating temperature range of -55°C to 125°C and high peak forward current ranging from 110A to 130A. The device is available in a number of packages, with both SMD and through-hole options available for different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IRD3CH9DB6 | Infineon Tec... | 0.0 $ | 1000 | DIODE GEN PURP 1.2KV 10A ... |
IRD3CH9DD6 | Infineon Tec... | 0.0 $ | 1000 | DIODE CHIP EMITTER CONTRO... |
IRD3CH9DF6 | Infineon Tec... | 0.0 $ | 1000 | DIODE CHIP EMITTER CONTRO... |
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IRD3901 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 20A D... |
IRD3902 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 20A D... |
IRD3903 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 20A D... |
IRD3909 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 30A DO... |
IRD3910 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 30A D... |
IRD3911 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 30A D... |
IRD3912 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 30A D... |
IRD3901R | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 20A D... |
IRD3903R | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 20A D... |
IRD3909R | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 30A DO... |
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