IRD3CH5BD6 Allicdata Electronics
Allicdata Part #:

IRD3CH5BD6-ND

Manufacturer Part#:

IRD3CH5BD6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: DIODE CHIP EMITTER CONTROLLED
More Detail: Diode
DataSheet: IRD3CH5BD6 datasheetIRD3CH5BD6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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Diodes - Rectifiers - Single

IRD3CH5BD6 is a single diode, rectifier with a zero reverse recovery time, making it an efficient option for a wide range of applications. It offers excellent forward voltage and current characteristics even under extreme operating conditions. This makes it perfect for hot-swap and voltage spike protection in power electronic design. Additionally, its zero reverse recovery time allows increased operations and improved power efficiency.

Application Field

IRD3CH5BD6 is well suited for a number of applications such as those in automotive, aeroplane, and power conversion systems. It can handle high surge currents, peak reverse voltages and high transient thermal stresses. This makes it an ideal option for automotive automotive applications such as starting and charging systems. Additionally, it is suitable for applications involving frequency converters, power modules and home appliance as well as solar panels and wind turbines.

Working Principle

IRD3CH5BD6 shares the same basic principle as other single diodes like the typical 1N4148. In a forward bias condition, it allows the current to flow from the anode to the cathode. In a reverse bias condition, it inhibits the current from going from the cathode back to the anode. The zener voltage ensures that when the diode is reversed biased, the voltage across it stays above a certain threshold. When this voltage is exceeded, the diode turns on and conducts current in a reverse direction, preventing a voltage spike.

Advantages

The key advantages of IRD3CH5BD6 are the zero reverse recovery time and its ability to withstand large current surges while still providing excellent performance. This allows it to provide superior level of hot-swap protection. It also has a wide operating temperature range of -55°C to 125°C and high peak forward current ranging from 110A to 130A. The device is available in a number of packages, with both SMD and through-hole options available for different applications.

The specific data is subject to PDF, and the above content is for reference

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