IRKE71/14A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1400V
Current - Average Rectified (Io):	80A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	10mA @ 1400V
Capacitance @ Vr, F:	--
Mounting Type:	Chassis Mount
Package / Case:	ADD-A-PAK (2)
Supplier Device Package:	ADD-A-PAK®

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Diodes - Rectifiers - SingleThe IRKE71/14A is a single, high performance insulated gate bipolar transistor (IGBT) designed for switching applications which require high power, high speed and high reliability. This type of IGBT can effectively limit the current and voltage stress on the gate oxide. As it integrates both bipolar and field effect, the IRKE71/14A is highly suitable for applications where demanding switching performances are required.The device is usually used in DC-DC converters, AC to DC rectifiers and converters, motor drives, plasma cutting and welding machines, inverters, and similar power electronics applications. Its working principle takes advantage of the dual-gate structure, combining the advantages of both bipolar and field-effect transistors. When the gate voltage is high, the drain-source region is formed and the conduction occurs in a bipolar mode. This can enable switching of high power and high frequencies. When the gate voltage is low, the device works in the field effect mode and can effectively limit the current from drain-source region.The IRKE71/14A is based on a vertical IGBT structure, which offers advantages such as control frequency switching capability up to 20kHz, high power density and high frequency capabilities, low output capacitance and low on-state resistance efficiency. The N-channel device offers an on-state voltage drop of approximately 1.2V and an on-state current rating of up to 6A. The device also features a number of protection functions, such as overcurrent, overvoltage and over temperature protection.The IRKE71/14A is also available as an IGBT module, which consists of two devices in parallel and with an integrated snubber network. This configuration allows the IGBTs to operate at very high frequencies and offers enhanced thermal characteristics. The module offers an on-state voltage drop of approximately 1V and a total on-state current rating of up to 12A.The IRKE71/14A is a high performance IGBT and is suitable for applications requiring high speed, high power and high efficiency. Its dual-gate technology enables it to switch very quickly with low gate driving power and offers a number of protection functions. The device is also available as a module, which can be utilised in applications where high frequency operation is required.

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