Allicdata Part #: | IRS2108PBF-ND |
Manufacturer Part#: |
IRS2108PBF |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER HALF-BRIDGE 8-DIP |
More Detail: | Half-Bridge Gate Driver IC Inverting, Non-Invertin... |
DataSheet: | IRS2108PBF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | IGBT, N-Channel MOSFET |
Voltage - Supply: | 10 V ~ 20 V |
Logic Voltage - VIL, VIH: | 0.8V, 2.5V |
Current - Peak Output (Source, Sink): | 290mA, 600mA |
Input Type: | Inverting, Non-Inverting |
High Side Voltage - Max (Bootstrap): | 600V |
Rise / Fall Time (Typ): | 100ns, 35ns |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-DIP |
Base Part Number: | IRS2108PBF |
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IRS2108PBF construction is the use of its 1200 V CoolMOS™ family and provides various features that have enabled designers to improve efficiency and reduce cost. In this article, we will discuss the IRS2108PBF application fields and working principles.
IRS2108PBF Application Fields
The IRS2108PBF can be applied in UPS, drive circuits, servers, telecommunications and industrial heating systems. Furthermore, it is also widely used in solar power systems and in other applications where high efficiency, high cell densities and low power conduction losses are required.
The benefit of applying the IRS2108PBF in these applications is the improved efficiency and cost savings it provides. The combination of its high voltage rating and ultra-low switching power losses make it excellent for applications where power savings is a concern. It is also convenient for applications that require miniaturized designs and complex current regulations.
IRS2108PBF Working Principle
The principle of the IRS2108PBF is based on a low-voltage gate drive that controls the current through a power transistor. This gate drive takes the gate drive conventional applied gate voltage and converts it into a low voltage voltage, allowing the power transistor to be driven faster and more efficiently. The gate drive output is also provided with an integrated free-wheel diode, preventing high current spikes during switching and enabling optimized control of the current flow.
The gate drive presents an efficient, high gain control of the power transistor allowing lower switching losses and ripple current. It is also adapted to provide a highly efficient soft-switching behavior which means that the switching switching frequencies can be higher without increasing switching losses.
Conclusion
The IRS2108PBF is a gate drive PMIC for power devices in a variety of applications. It combines a 1200 V CoolMOS™ family and a low-voltage gate drive to improve efficiency and reduce cost for power devices. Its working principle is based on a low-voltage gate drive that controls the current through a power transistor and it has excellent features such as a highly efficient soft-switching behavior and integrated free-wheel diode.
The specific data is subject to PDF, and the above content is for reference
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