IRS2332STRPBF

Current - Peak Output (Source, Sink):	250mA, 500mA
Base Part Number:	IRS2332SPBF
Supplier Device Package:	28-SOIC
Package / Case:	28-SOIC (0.295", 7.50mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	80ns, 35ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.2V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	6
Channel Type:	3-Phase
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Integrated gate drivers are used in power semiconductor switches, such as MOSFETs and IGBTs, including the popular IRS2332STRPBF. This device is capable of driving up to eight external power MOSFETs in parallel, and is designed for a wide range of applications, including solar power conversion, motor drive, UPS, and telecom applications. It is an ideal device for high-voltage and high-power applications. IntroductionThe IRS2332STRPBF from Infineon is an integrated gate driver (IGD) that features an advanced pre-driver core and integrated low side driver circuits. It has integrated fault protection and thermal protection features to ensure safety and reliability. The internal logic provides fault reporting, fault latch-off, and thermal protection, which can be used to monitor the driver’s status.Application FieldThe IRS2332STRPBF integrated gate driver is suitable for a broad range of applications, including photovoltaic, motor drive, UPS, and telecom solutions. It is ideal for controlled switching of high-power MOSFETs in DC/DC and AC/DC converters. The device is designed to drive up to eight external MOSFETs and is capable of driving up to 35A of continuous current. It is also suitable for non-isolated SMPS applications, such as battery-operated systems, and for gate drive current of up to 70A with two IRS2332STRPBFs in parallel.Working PrincipleThe integration of a fast pre-driver core and low side driver circuits make it easy for the customer to design a high-efficiency system. The pre-driver core is designed for fast switching performance and current handling. The low side driver is built in to provide an effective switching speed. The internal logic provides fault reporting, fault latch-off, and thermal protection, which can be used to monitor the driver’s status. The IRS2332STRPBF is a high-performance device that helps increase power efficiency in a wide range of applications. Additionally, it is also capable of supporting pre-charge, discharge, and turn-off functions. BenefitsThe IRS2332STRPBF integrated gate driver offers a variety of benefits, including: • High-efficiency power conversion• Reduced board space• Low cost• Improved reliability• Robust protection features• High-speed switchingIn addition to these benefits, the device also has a wide range of operating voltages, from 6V to 40V, and is highly efficient over a wide range of temperatures. The device also features a low-power-mode option which helps reduce power consumption. ConclusionThe IRS2332STRPBF integrated gate driver is an ideal device for high-voltage and high-power applications. It is designed to be highly reliable and efficient, and provides a wide range of features and benefits that make it suitable for a wide range of applications. Additionally, the device is easy to use and integrates a pre-driver core and low side driver circuits for fast switching performance and high current handling. The IRS2332STRPBF is an excellent choice for controlled switching of high-power MOSFETs in applications such as photovoltaic, motor drive, and UPS solutions.

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