IRS21171SPBF

Current - Peak Output (Source, Sink):	290mA, 600mA
Base Part Number:	IRS21171SPBF
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	75ns, 35ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.5V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	1
Channel Type:	Single
Driven Configuration:	High-Side
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRS21171SPBF is an integrated gate driver and protection device specifically designed for power MOSFETs and IGBTs employed in high-power switching applications, such as solar PV, industrial and automotive applications. It integrates independent low-side and high-side insulated gate drivers to drive dual N-Channel enhancement mode (eMOS) power MOSFETs and dual N-Channel or N-Channel and P-Channel IGBTs. The output voltage of the high-side and low-side drivers can be adjusted from 0V up to 15V and from 0V to 10.5V, respectively.\The IRS21171SPBF offers a number of advanced protection features, such as temperature and current sensing, as well as under-voltage lockout and over-voltage protection. The device is also equipped with an optional low power dissipation green mode operation, featuring adaptive switching when the device is enabled and disabled. This reduces power dissipation when the device is disabled, extending the life of the MOSFETs or IGBTs in the application.

Application Fields

The features of the IRS21171SPBF make it ideal for many high-power switching applications, such as automotive and control heating, ventilation, and air-conditioning systems, as well as industrial lighting, medical equipment, and renewable energy systems, such as solar PV inverters and wind turbines. For automotive applications, The IRS21171SPBF provides an effective solution as a dead-time generator and allows the Modulator to be compatible with many types of vehicle electronics, from mild-hybrid to plug-in hybrid and electric vehicles. The device is designed to handle the cross conduction current through both devices for smooth transitions between ground and positive power supply in motor drives. Additionally, the device offers enhanced protection for motor drive circuits, including short-circuit protection, over-temperature protection, over-voltage protection, and under-voltage protection. This protection helps to reduce system downtime and improve system reliability in automotive applications.The device is suitable for industrial lighting, medical equipment, and renewable energy systems, such as solar PV inverters and wind turbines. It features a low quiescent current and high efficiency operation, making it ideal for these applications. In addition, the device is compatible with many common microcontrollers and power monitors, enabling real-time monitoring of system performance and optimized switch coordination.

Working Principle

The IRS21171SPBF is a dual high-side and low-side gate driver. It is designed to drive both N-Channel enhancement mode MOSFETs (eMOS) and N-Channel plus P-Channel IGBTs in high-power switching applications. The high-side MOSFET or IGBT turns on when the high-side driver increases its source voltage to the value determined by the On-Time Control Logic. After that point, the drain current into the high-side MOSFET or IGBT is increased at a fixed rate determined by the Rise Time Control Logic. After the on-time, the high-side driver returns to the off-state, turning off the device to the opposite polarity. The low-side driver works the same way except that it controls the drain current out of the low-side MOSFET or IGBT. The high-side driver also has a built-in voltage clamp to prevent its gate voltage from exceeding the off-state voltage. In addition to driving the MOSFET or IGBTs, the IRS21171SPBF offers a number of advanced protection features, such as temperature and current sensing, as well as under-voltage lockout and over-voltage protection. This helps to reduce system downtime and improve system reliability in high-power switching applications.

Conclusion

The IRS21171SPBF is a highly integrated gate driver and protection device specifically designed for power MOSFETs and IGBTs employed in high-power switching applications, such as automotive and industrial systems. This device comes with a range of features and protection capabilities, making it suitable for a variety of applications. The working principle of the device consists of a high-side and low-side driver, with a range of output voltage, to drive both N-Channel enhancement mode and N-Channel plus P-Channel IGBTs. The device also offers advanced protection features, such as temperature and current sensing, as well as under-voltage lockout and over-voltage protection.

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