IRS26072DSTRPBF

Current - Peak Output (Source, Sink):	200mA, 350mA
Base Part Number:	IRS26072DSPBF
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	150ns, 50ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	0.8V, 2.5V
Voltage - Supply:	10 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Independent
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRS26072DSTRPBF is an all-in-one gate driver IC, specifically designed to provide all of the necessary stages to drive and control a high-power MOSFET or IGBT. This IC is a member of Integrated Device Technology\'s (IDT) DSTR family of gate drivers - which was designed to provide all of the necessary voltages, currents, and timing information to effectively drive both high-side and low-side MOSFETs/IGBTs. The IRS26072DSTRPBF is a highly reliable and cost-effective solution, which is ideal for high-power applications including automotive, battery management and wireless power transfer.This gate driver IC is capable of driving both N-channel and P-channel MOSFETs up to 500mA in a typical application. The device also features an external clamp diode and an adjustable deadtime setting to prevent conflict between the high-side and low-side driven MOSFETs/IGBTs. The adjustable deadtime feature also allows the user to adjust the timing of the transitional switching electronics.The IRS26072DSTRPBF gate driver IC has an adjustable overcurrent protection feature which monitors the voltage drop across an external sense resistor. This feature is designed to automatically shut down the IC to prevent damage to the external MOSFETs/IGBTs when an excessive load current occur.The IRS26072DSTRPBF gate driver IC also features built in ESD protection on the logic and power pins to protect the IC from electrical transients. This protection also helps to ensure that the IC remains functional in harsh operating environments.The device also utilizes IDT\'s Rapid Core Detector (RCD) technology, which provides overvoltage protection and shut down of the IC when an overvoltage condition occurs. The RCD feature is designed to monitor the voltage on the MOSFET/IGBT drain pins, and shut down the device if an overvoltage condition is detected.The IRS26072DSTRPBF gate driver IC is available in an exposed pad SOIC-7 package with exposed power and ground pads for optimal thermal performance. The device is specified for operation from -40°C to +125°C and is compliant with automotive and military standards.In conclusion, the IRS26072DSTRPBF gate driver IC provides all of the necessary features and functions necessary for reliable high-power MOSFET/IGBT gate driving. With its wide operating temperature range, good EMI performance, and ESD protection, the device is well suited for automotive, wireless power transfer, and battery management applications. The RCD feature ensures protection of both the device and the connected MOSFET/IGBTs form overvoltage conditions, and its adjustable deadtime feature allows for precise timing control of the switching electronics.

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