IS25LQ010B-JDLE Allicdata Electronics
Allicdata Part #:

IS25LQ010B-JDLE-ND

Manufacturer Part#:

IS25LQ010B-JDLE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 1M SPI 104MHZ 8TSSOP
More Detail: FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/...
DataSheet: IS25LQ010B-JDLE datasheetIS25LQ010B-JDLE Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The IS25LQ010B-JDLE is a memory type memory device made by ISSI that combines 10,000 cycles of Endurance, without any compromise in terms of speed, reliability and power consumption. This particular device is intended for use in a wide range of applications, including wearables, consumer electronics, industrial automation and medical. In this article, we will discuss the application field and working principle of the IS25LQ010B-JDLE memory type memory device, and how it stands out from the competition.

Overview

The IS25LQ010B-JDLE is a 3.3V, 10V endurance memory. This device utilizes ISSI’s Dual-Level CAN(DLCA)technology to maximize write endurance while reducing the power consumption. It also features a 1.8V I/O, enabling compatibility with modern processors and accelerators alike. The device provides 10,000 cycles of endurance, which corresponds to a 10-year warranty from ISSI. An internal ESD protection circuit is also included, ensuring that the device survives in environments with high ESD testing requirements.

Application Field

The IS25LQ010B-JDLE is suited for use in a wide range of applications where long term data retention and high endurance is required. Due to its advanced power management system and internal ESD protection circuits, the device is ideally suited for use in environments with extreme temperatures or high levels of ESD. The device is particularly well-suited for applications in the wearables, consumer electronics, industrial automation and medical fields.

Working Principle

The IS25LQ010B-JDLE works by utilizing ISSI’s proprietary Dual-Level CAN (DLCA) technology. This technology works by using two distinct phases to control data retention and power efficiency. During the first phase, the device performs several erase and program cycles (called “bursts”) to store the user data in its memory cells. During the second phase, the device keeps the data stored in its cells for extended periods of time, even when the power supply is disconnected. This ensures that the user data remains secure even in the event of a system power failure.

The internal ESD protection circuit is also utilized by the IS25LQ010B-JDLE, ensuring that the device effectively protects against any ESD events. When the device detects an ESD event, it automatically triggers an erosion control circuit that discharges the energy through an external circuit. This allows for the device to continue operating normally even in the worst case scenarios.

Conclusion

The IS25LQ010B-JDLE is a memory type memory device that offers a high endurance and power efficiency while providing a long 10-year warranty. It is suitable for applications in wearables, consumer electronics, industrial automation and medical fields, making it one of the best options for these industries. The device also features an advanced power management system, an internal ESD protection circuit, and ISSI’s proprietary Dual-Level CAN (DLCA) technology, all of which ensure reliable and long-term data retention.

The specific data is subject to PDF, and the above content is for reference

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