IS25LQ080B-JKLE

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS25LQ080B-JKLE Application Field and Working Principle

IS25LQ080B-JKLE is a type of memory that stores digital data. It is a Non-Volatile Flash Memory, meaning it can keep its content even when powered off. This type of memory is widely used in electronics such as phone, smartphones, photoshoots, digital cameras, game consoles and more.

Characteristics

IS25LQ080B-JKLE is a Serial Peripheral Interface (SPI) 3.0V supported flash memory, which includes a 4K bytes sector erase feature that allows sector erase operations. It also supports an expanded erase that can erase an entire chip in a single operation. The memory includes hardware controlled write protection that can be enabled or disabled through write protect commands. In addition, it includes an array of protection registers to secure user data.

The device provides a broad range of read and program protocols, including Continuous Array Read, Byte-by-Byte Programming, and Sector Erase commands.

Soft ECC and wear-leveling algorithms are incorporated for better endurance and reliable data communication.

Applications

IS25LQ080B-JKLE can be used for applications that require a reliable, non-volatile and low cost storage solution. Such applications include:

• Mobile phones and audio systems
• Smart cameras
• Tablet PC’s and e-Book readers
• Game consoles
• GPS systems
• Wireless modules
• USB Flash Drives

Working Principle

The operation of the IS25LQ080B-JKLE is based on the Non-Volatile Memory (NVM) principle of Flash Memory. It stores data in a floating-gate memory cell composed of two adjacent transistors, also known as the floating-gate cell. When the memory cell is in the "erase" state, the two transistors are separated by an oxide layer, allowing no electrical resistance between the two transistors. This prevents the passage of electricity between them and the cell does not contain any data.

When data is written in the memory cell, the oxide layer is removed from one of the two transistors, causing one of them to be charged and writing a bit in the cell. This charge can then remain in the cell for a long period of time, even when power is turned off, due to its non-volatile nature.

When data is read out of the cell, the charge of the cell is detected and translated into a logic state of 0 or 1. The device will then output this state as the result of the read operation. Writing in the cell is done with the help of a write voltage which is applied to the cell in order to erase or write a bit.

Conclusion

IS25LQ080B-JKLE is a type of memory used in a wide variety of applications that require data storage with a long retention period. The working principle of IS25LQ080B-JKLE is based on the NVM principle of Flash Memory which enables it to store and retain data even when power is turned off. It is a very popular memory device due to its reliability and non-volatility, making it the ideal choice for applications that require a secure data storage solution.

The specific data is subject to PDF, and the above content is for reference