IS25LQ512B-JDLE-TR Allicdata Electronics
Allicdata Part #:

IS25LQ512B-JDLE-TR-ND

Manufacturer Part#:

IS25LQ512B-JDLE-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC FLASH 512K SPI 104MHZ 8TSSOP
More Detail: FLASH - NOR Memory IC 512Kb (64K x 8) SPI - Quad I...
DataSheet: IS25LQ512B-JDLE-TR datasheetIS25LQ512B-JDLE-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Memory Interface: SPI - Quad I/O
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS25LQ512B-JDLE-TR belongs to the Flash Memory family and is a common solution for coding, storage, and applications incorporating advanced memory technology. Due to its non-volatile and reliable performance, IS25LQ512B-JDLE-TR has become increasingly popular in a wide range of applications, including automotive computing, wireless communication, medical and industrial applications.

The major components of IS25LQ512B-JDLE-TR include a semiconductor Memory cell array, an internal controller, and the external communication interface. Its memory cells are based on the Non-Volatile Floating Gate Memory Cell technology which can keep their content even when power is removed. It is also known for its ability to function with low power consumption.

The internal controller includes a Program/Erase (P/E) circuit and a PCR Circuit. The Program/Erase circuit provides on-chip programming with four independent top-level entry points. The PCR Circuit provides internal control and command signals and data read/write control. The external communication interface connects the Integrated Circuit (IC) to the host, enabling it to send and receive data and control signals.

IS25LQ512B-JDLE-TR has broad application fields. It can be used in robotics, medical imaging, industrial automation, automotive computing, and wireless communication. It is also used in wearables such as smart watches and fitness trackers. These applications have benefited immensely from its low power and non-volatile performance.

The working principle of IS25LQ512B-JDLE-TR is based on Non-Volatile Floating Gate Memory Cell technology and its P/E circuit. In the process of writing and reading data, the logic circuits determine the operation, and the address switches and analog circuits map the address and data to the N-MOS transistors. The N-MOS transistors then activate and deactivate the Memory cells, respectively. The data written to the array is retained even in the absence of power, allowing for non-volatile storage.

IS25LQ512B-JDLE-TR has significantly improved the reliability, speed, and power consumption of the applications in which it is used. With its sophisticated and well-crafted working principle and the broad variety of applications it can be used in, IS25LQ512B-JDLE-TR Memory is well-suited to most applications that require high reliability, low power consumption and non-volatile performance.

The specific data is subject to PDF, and the above content is for reference

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