IS25LQ020B-JKLE

Series:	--
Packaging:	Bulk
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Mb (256K x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	800µs
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x5)

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Memory: IS25LQ020B-JKLE Application Field and Working Principle

The IS25LQ020B-JKLE is a non-volatile memory manufactured by ISSI (Integrated Silicon Solutions, Inc). The memory features a sector erase capability, low power consumption and is fast and easy to implement. It is widely used in various applications, such as automotive, industrial, consumer, portable electronic, medical and telecommunications products.This memory has a fast write cycle time and provides an extended memory density range of up to 8 Megabytes (MB). The memory is comprised of 128-kbit blocks and allows users to define what type of blocks can be accessed by the application. The memory can be programmed either by using the read/write cycle or sector erase cycle.The working principle behind this memory is based on the level of stored electrical charge within the flash memory cells. The charge is stored in the tunnel oxide layer which is present between the floating gate and the control gate. The cell is also surrounded by dielectric layers that provide the barrier between the two gates.When applied with voltage, electrons are painted over the floating gate. As a result, the charge stored in the floating gate is increased. When the control gate is used to control the electrons, the charge will move from the floating gate to the control gate.The cell can be programmed, erased and read by various cycles, each of them takes 1600ms. The programming cycle involves the steps of blowing on the whole cell, blowing on a specific bit, programming the cell and verifying it. The erase cycle is used to erase the sectors, and the read cycle is used to read a specific block in the cell.The IS25LQ020B-JKLE is a fast and reliable non-volatile flash memory component. It is suitable for a wide range of applications, and it can be used in automotive, industrial, consumer, portable electronic, medical and telecommunications products.This memory component offers a number of advantages, such as its low power consumption and fast write cycle time. Furthermore, the sector erase capability allows for extended memory density, up to 8 MB.In conclusion, the IS25LQ020B-JKLE is an ideal memory component for automotive, industrial, consumer, portable electronic, medical and telecommunications products. With its sector erase capability, fast write cycle time and low power consumption, it provides users with efficient and reliable data storage.

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