IS25LQ512B-JULE-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Kb (64K x 8)
Clock Frequency:	104MHz
Write Cycle Time - Word, Page:	800µs
Memory Interface:	SPI - Quad I/O
Voltage - Supply:	2.3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-UFDFN Exposed Pad
Supplier Device Package:	8-USON (2x3)

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Introduction

IS25LQ512B-JULE-TR is a non-volatile serial F-RAM (Ferroelectric Random Access Memory) device that combines the performance of the traditional memory with fast write capabilities. It is useful in systems requiring large amounts of data storage and quick access times. The IS25LQ512B-JULE-TR offers significant advantages over other non-volatile memory devices, such as ferroelectric RAM and flash memory, including increased performance and reduced power consumption.

Application Field

The IS25LQ512B-JULE-TR is suitable for a wide range of applications, such as industrial, automotive and military applications. In the industrial field, the IS25LQ512B-JULE-TR can be used for control and data logging systems, such as process control systems, industrial automation control and field devices. It is well suited for data logging and control applications due to its fast write cycles and high endurance.In the automotive industry, the IS25LQ512B-JULE-TR can be used for in-vehicle data storage and control applications, such as vehicle tracking systems and engine management systems. The device is also suitable for data logging applications, such as recording vehicle speed, engine performance and tire pressure.In military applications, the IS25LQ512B-JULE-TR can be used for high-reliability mission-critical data storage. The device is well suited for storing mission-critical data, such as flight plans and navigation data.

Working Principle

Every bit of data stored in IS25LQ512B-JULE-TR is physically represented by a small microscopic capacitor, which is composed of two electrodes separated by an insulator. When a charge is applied to the electrodes, the capacitor stores a small amount of energy and the data is also stored. The energy stored in the capacitor is proportional to the charge applied to it. To write data to the memory, the appropriate amount of charge is applied to the electrodes by the write circuit of the device. To read the data, the microcontroller reads the voltage across the two electrodes.When the capacitor is read, the charge stored in it is dissipated and the capacitor is reset to its original state. Therefore, to ensure reliable data readouts, the IS25LQ512B-JULE-TR contains a self-refresh circuit that maintains the charge stored in the capacitors by periodically recharging them. The self-refresh circuit is powered by an external power supply and is configured to periodically refresh the capacitors at a programmable interval.The IS25LQ512B-JULE-TR also has built-in power-fail detection circuits that detect when the external power supply is removed and preserve all stored data in the non-volatile memory. This ensures data integrity in the event of a power failure.

Conclusion

The IS25LQ512B-JULE-TR is a unique non-volatile memory device that combines the performance of traditional memories and fast write capabilities. The device is suitable for a wide range of applications, including industrial, automotive and military. Its main advantages are its fast write and read cycles and high endurance. The device also contains a self-refreshing circuit and power-fail detection circuits, ensuring data integrity and reliability.

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