IS25WP080D-JKLE

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	800µs
Memory Interface:	SPI - Quad I/O, QPI, DTR
Voltage - Supply:	1.65 V ~ 1.95 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON (6x5)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS25WP080D-JKLE Memory

IS25WP080D-JKLE is a non-volatile Serial Flash memory device from ISSI (Integrated Silicon Solution, Inc.), which provides a fast, low-power storage for data applications. It is an 8Mb (1M x 8) SPI-compatible serial Flash memory, with an operational voltage range of 2.7V - 3.6V and an access time of 25ns.The IS25WP080D-JKLE Memory is a very versatile device suitable for a variety of applications. It is used in a number of different products including industrial control applications, medical devices, handheld electronics, automotive, networking, automotive body electronics, and consumer applications such as cameras and PDAs. The product features a wide operating temperature range of -40°C to +85°C, making it suitable for use in harsh environments. Additionally, the product is available in a wide range of memory densities among other options, such as SLC (single-level cell) and MLC (multi-level cell) technologies.The main features of this device include two digital write protection (DWP) pins, a hardware reset pin and a status register. The digital write protection pins are used to protect the memory contents in case of software errors, while the hardware reset pin allows the user to reset the device without cycling power. The status register can be used to monitor the status of the device and allows the user to enable the write protection, read status, enable/disable memory protection, enable/disable chip select, and more.In terms of working principle, the IS25WP080D-JKLE Memory is based on the principles of ferroelectric random access memory (FRAM), where data is stored in small cells scattered throughout the memory array. FRAM utilizes the properties of ferroelectric materials, where the electric polarity can be reversed or ‘written’ at certain locations, which saves data. Data is read and written by controlling the voltage of an electrode, which is placed near the memory cell.Data reading and writing is done by transferring the data to and from the IS25WP080D-JKLE Memory in two phases: 1) Command Waveform, and 2) Data Waveform. During the Command Waveform Phase, the control lines control the diode in the cell to turn it on and off in order to read or write data. During the Data Waveform Phase, the data is transferred to or from the selected addresses.Overall, the IS25WP080D-JKLE Memory is an essential component for many applications and offers a fast, low-power storage for data-intensive tasks. With its versatile feature set and wide range of densities, the IS25WP080D-JKLE is suitable for a variety of applications and offers reliable data storage and management.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description